[图书][B] Nucleation theory and growth of nanostructures
VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
Predictive modeling of self-catalyzed III-V nanowire growth
We develop a quantitative model of the self-catalyzed vapor-liquid-solid growth of GaAs
nanowires, that depends on only a few a priori unknown physical parameters. The model is …
nanowires, that depends on only a few a priori unknown physical parameters. The model is …
Recent progress in integration of III–V nanowire transistors on Si substrate by selective-area growth
K Tomioka, T Fukui - Journal of Physics D: Applied Physics, 2014 - iopscience.iop.org
We report on the recent progress in electronic applications using III–V nanowires (NWs) on
Si substrates using the selective-area growth method. This method could align vertical III–V …
Si substrates using the selective-area growth method. This method could align vertical III–V …
Coaxial multishell (In, Ga) As/GaAs nanowires for near-infrared emission on Si substrates
E Dimakis, U Jahn, M Ramsteiner, A Tahraoui… - Nano …, 2014 - ACS Publications
Efficient infrared light emitters integrated on the mature Si technology platform could lead to
on-chip optical interconnects as deemed necessary for future generations of ultrafast …
on-chip optical interconnects as deemed necessary for future generations of ultrafast …
Stopping and resuming at will the growth of GaAs nanowires
G Priante, S Ambrosini, VG Dubrovskii… - Crystal growth & …, 2013 - ACS Publications
We report on the possibility of interrupting and resuming at will the self-assisted growth of
GaAs nanowires by molecular beam epitaxy. The Ga nanoparticles assisting nanowire …
GaAs nanowires by molecular beam epitaxy. The Ga nanoparticles assisting nanowire …
Ga-assisted MBE growth of GaAs nanowires using thin HSQ layer
We present detailed results about the molecular beam epitaxy (MBE) growth of GaAs
nanowires (NWs) on GaAs (111) B substrates prepared for the growth by a new method …
nanowires (NWs) on GaAs (111) B substrates prepared for the growth by a new method …
Characterization of a Ga-assisted GaAs nanowire array solar cell on Si substrate
JP Boulanger, ACE Chia, B Wood… - IEEE Journal of …, 2016 - ieeexplore.ieee.org
A single-junction core-shell GaAs nanowire (NW) solar cell on Si (1 1 1) substrates is
presented. A Ga-assisted vapor-liquid-solid growth mechanism was used for the formation of …
presented. A Ga-assisted vapor-liquid-solid growth mechanism was used for the formation of …
Theory of VLS growth of compound semiconductors
VG Dubrovskii - Semiconductors and Semimetals, 2015 - Elsevier
In this work, we give a detailed overview of theoretical methods used for modeling the vapor–
liquid–solid (VLS) growth of III–V semiconductor nanowires. We emphasis the importance of …
liquid–solid (VLS) growth of III–V semiconductor nanowires. We emphasis the importance of …
GaAs/GaInP nanowire solar cell on Si with state-of-the-art V oc and quasi-Fermi level splitting
C Tong, A Delamarre, R De Lépinau, A Scaccabarozzi… - Nanoscale, 2022 - pubs.rsc.org
With their unique structural, optical and electrical properties, III–V nanowires (NWs) are an
extremely attractive option for the direct growth of III–Vs on Si for tandem solar cell …
extremely attractive option for the direct growth of III–Vs on Si for tandem solar cell …
In situ passivation of GaAsP nanowires
We report on the structural and optical properties of GaAsP nanowires (NWs) grown by
molecular-beam epitaxy. By adjusting the alloy composition in the NWs, the transition …
molecular-beam epitaxy. By adjusting the alloy composition in the NWs, the transition …