Rare-earth doped materials are of crucial importance to optoelectronics, and are widely
deployed in fibre amplifiers and solid-state lasers. This article summarises the present state …

Conceived over 30 years ago, photoconductive (PC) emitters have proved essential in the
development and spread of terahertz technology. Since then, not only have they been used …

Rare-earth impurities in III–V semiconductors are known to self-assemble into semimetallic
nanoparticles which have been shown to reduce lattice thermal conductivity without harming …

A concept for the fabrication of highly symmetric quantum dots that are coherently
embedded in a single crystalline matrix is demonstrated. In this approach, the formation of …

Two photoconductive emitters-one with a self-complementary square spiral antenna, and
the other with a resonant slot antenna-were fabricated on a GaAs epilayer embedded with …

The incorporation of lanthanide pnictide nanoparticles and films into III-V matrices allows for
semiconductor composites with a wide range of potential optical, electrical, and thermal …

The growth of ErAs on GaAs (001) surfaces occurs by an embedded growth mode
encompassing three steps;(i) island nucleation within the substrate surface,(ii) lateral growth …

Gallium arsenide doped with erbium has been grown by molecular beam epitaxy. At growth
temperatures in the range 540-605 “C, and with arsenic to gallium flux ratios of 2 and more …

The electronic properties of epitaxial semiconductors are strongly modified by the inclusion
of semi-metallic nanoparticles grown in the semiconductor. For example, epitaxial semi …

Recently, there has been interest in semimetallic rare earth monopnictide nanoparticles
epitaxially embedded in III-V semiconductors due to the drastic changes brought about in …