Near-infrared (NIR) light has attracted considerable attention in diverse applications, such
as food testing, security monitoring, and modern agriculture. Herein, the advanced …

Near-infrared (NIR) phosphors with capability for blue light to 850 nm broadband NIR
emission conversion are highly desirable for security-monitoring LEDs. Targeted phosphor …

The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum,
and it drops rapidly beyond 800 nm in near-infrared wavelengths. We have experimentally …

The ability to monolithically integrate high-speed photodetectors (PDs) with silicon (Si) can
contribute to drastic reduction in cost. Such PDs are envisioned to be integral parts of high …

An inductorless 10-Gb/s optical receiver including a novel transimpedance amplifier (TIA)
with dual feedback loop and a limiting amplifier with third-order nested feedback is …

This letter reports on the first silicon avalanche photodetectors (APDs) with over 10-GHz
bandwidth. Three types of APDs based on P+/N-well junction are realized in standard …

Two different speed optimized avalanche photodiodes (APDs) fabricated in a 0.35 μm
standard high-voltage (HV) complementary metal-oxide-semiconductor (CMOS) process …

We present a CMOS integrated optical receiver having under-damped transimpedance
amplifier (TIA) and CMOS avalanche photodetector (APD) realized in 65-nm CMOS …

We present a silicon avalanche photodetector (APD) based on multiple P+/N-well junctions
fabricated in standard complementary metal-oxide-semiconductor (CMOS) technology. In …

This paper outlines the development of a CMOS optical receiver capable of handling data at
a rate of 4 Gb/s. The receiver makes use of a multi-dot PIN photodiode with a bandwidth of …