Homoepitaxy provides an ideal testing ground for fundamental concepts in film growth. The
rich variety of complex far-from-equilibrium morphologies which can form during deposition …

Experimental results on the epitaxy of Si and Ge on Si (001) and Si (111) surfaces, which
are obtained by scanning tunneling microscopy (STM) imaging during growth, are reviewed …

Understanding the energy it takes to build or break chemical bonds is essential for scientists
and engineers in a wide range of innovative fields, including catalysis, nanomaterials …

Growth of thin films from atoms deposited from the gas phase is intrinsically a
nonequilibrium phenomenon governed by a competition between kinetics and …

Thin films are often grown away from thermodynamic equilibrium and their morphology
becomes determined by kinetics. The final structure of the epitaxial film is decided in the very …

The remarkable development of organic thin film transistors (OTFTs) has led to their
emerging use in active matrix flat-panel displays, radio frequency identification cards, and …

Crystal growth far from thermodynamic equilibrium is nothing but homoepitaxy-thin film
growth on a crystalline substrate of the same material. Because of the absence of misfit …

The dynamic scaling of the island-size distribution in submonolayer epitaxial growth and its
dependence on the critical island size i is studied using a realistic model of epitaxial growth …

Scanning tunnelling microscopy (STM) has proved to be a fascinating and powerful
technique in the field of surface science. The fact that sets the STM apart from most other …

Scanning Tunneling Microscopy I provides a unique introduction to a novel and fascinating
technique that produces beautiful images of nature on an atomic scale. It is the first of three …