Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …

Alloys between Ga 2 O 3 and Al 2 O 3 (AGO) present a rich material space exhibiting
numerous structural phases with unique optoelectronic properties that make them attractive …

ABSTRACT β-phase gallium oxide (Ga2O3) is an emerging ultrawide bandgap (UWBG)
semiconductor with a bandgap energy of∼ 4.8 eV and a predicted high critical electric field …

Here we demonstrate a dramatic improvement in Ti/Au ohmic contact performance by
utilizing the anisotropic nature of β-Ga2O3. Under a similar doping concentration, Ti/Au …

Ga2O3 is a wide-band gap semiconductor of emergent importance for applications in
electronics and optoelectronics. However, vital information of the properties of complex …

The development of novel ultra-wide bandgap (UWBG) materials requires precise
understanding of the atomic level structural origins that give rise to their important properties …

The valence and conduction band offsets at (100) β-(Al x Ga 1− x) 2 O 3/β-Ga 2 O 3
heterointerfaces with the increasing Al composition are determined via x-ray photoelectron …

Here, we have explored the thermal stability of α-(Al, Ga) 2 O 3 grown by the molecular-
beam epitaxy on m-plane sapphire under high-temperature annealing conditions for various …

β-Ga 2 O 3 is an emerging ultra-wide bandgap semiconductor, holding a tremendous
potential for power-switching devices for next-generation high power electronics. The …

The understanding and availability of quantitative measurements of the diffusion of dopants
and impurities in Ga 2 O 3 are currently at an early stage. In this work, we summarize what is …