Optical mapping of nonequilibrium charge carriers

ED Guarin Castro, A Pfenning… - The Journal of …, 2021 - ACS Publications
We investigate the energy relaxation segmentation in a resonant tunneling heterostructure
by assessing the optical and transport dynamics of nonequilibrium charge carriers. The …

Heating of a degenerate electron ensemble in a well of compound semiconductors at low lattice temperatures

B Roy, S Bhattacharyya, DP Bhattacharya - Applied Physics A, 2019 - Springer
At low lattice temperatures, an ensemble of electrons exhibits some specific features which
are hardly observed for higher lattice temperatures. Considering a two-dimensional …

An inclusive theory of the hall mobility of a non-ohmic degenerate ensemble of two-dimensional electrons in a modulation-doped AlGaN/GaN heterostructure at low …

B Roy, S Bhattacharyya… - AIP Conference …, 2024 - pubs.aip.org
The high-field Hall mobility characteristic of an ensemble of two-dimensional electrons in an
infinite triangular potential well of a modulation-doped AlGaN/GaN heterostructure at low …

A study of the average energy loss to the acoustic modes and the non-ohmic mobility characteristics of a degenerate semiconductor using an alternative model of …

A Basu - AIP Conference Proceedings, 2024 - pubs.aip.org
An analysis has been made to study the effect of degeneracy on the average energy loss
rate of the nonequilibrium electrons and the non-ohmic mobility characteristics of a …

A realistic analysis of the phonon growth characteristics in a degenerate semiconductor using a simplified model of Fermi-Dirac distribution

A Basu, B Das, TR Middya, DP Bhattacharya - Journal of Physics and …, 2017 - Elsevier
The phonon growth characteristic in a degenerate semiconductor has been calculated
under the condition of low temperature. If the lattice temperature is high, the energy of the …

An analysis of phonon emission as controlled by the combined interaction with the acoustic and piezoelectric phonons in a degenerate III–V compound semiconductor …

A Basu, B Das, TR Middya… - Philosophical …, 2018 - Taylor & Francis
Compound semiconductors being piezoelectric in nature, the intrinsic thermal vibration of
the lattice atoms at any temperature gives rise to an additional potential field that perturbs …

Simplified approach of investigation of binding energy for fermionic pairing in two dimensional Fermi liquid type superconducting materials at finite low temperature

S Pal, S Datta - Physica C: Superconductivity and its Applications, 2021 - Elsevier
Relation between the binding energy of pair of fermions and the magnitude of the attractive
interaction between them is investigated theoretically with the help of mean field …

The effects of degeneracy of the carrier ensemble on the energy loss rate and the high field mobility characteristics under the conditions of low lattice temperatures

A Basu, B Das, TR Middya, DP Bhattacharya - Physica B: Condensed …, 2017 - Elsevier
The rate of loss of energy of the non-equilibrium electrons to the acoustic mode lattice
vibration in a degenerate semiconductor is obtained under the condition, when the lattice …

Heating of carriers as controlled by the combined interactions with acoustic and piezoelectric phonons in degenerate III-V semiconductors at low lattice temperature

DP Bhattacharya, J Das, A Basu, B Das - Physica B: Condensed Matter, 2017 - Elsevier
In compound semiconductors which lack inversion symmetry, the combined interaction of
the electrons with both acoustic and piezoelectric phonons is dominant at low lattice …

Non-Ohmic Characteristics of a Quantum Confined Degenerate Ensemble of Carriers in a Well of GaAs at Low Lattice Temperature

B Roy, S Bhattacharyya, DP Bhattacharya - Computers and Devices for …, 2021 - Springer
High-field mobility characteristics of a degenerate two-dimensional gas (2DEG) are obtained
under the condition of low lattice temperature. The characteristics are obtained by adopting …