This paper reviews the design of watt-level integrated CMOS RF power amplifiers (PAs) and
state-of-the-art results in the literature. To reach watt-level output power from a single-chip …

In this paper, a generic combiner design technique is developed for class-E outphasing
transmitters. The design procedure starts with calculation of the combiner network …

There is a growing demand for the implementation of the RF power amplifier (PA) in CMOS
technologies, due to its cost and integration benefits. Most of the already reported CMOS …

A transformer-combined fully integrated outphasing class-D PA in 45 nm LP CMOS achieves
31.5 dBm peak output power at 2.4 GHz with 27% peak PAE, and supports over 86 dB of …

This paper presents a highly efficient silicon-based envelope-tracking power amplifier (ET-
PA) for broadband wireless applications. A pseudo-differential power amplifier (PA) is …

Recent decades have seen significant progresses in the field of power amplifiers (PAs). In
order to present the evolution of the field, this paper shows the development trends of the PA …

This brief presents a nonisolated multilevel linear amplifier with nonlinear component (LINC)
power amplifier (PA) implemented in a standard 0.18-μm complementary metal-oxide …

This paper presents a direct model structure for describing class-D outphasing power
amplifiers (PAs) and a method for digitally predistorting these amplifiers. The direct model …

This paper presents the design and analysis of a low-power Class-D stage in 90 nm CMOS
featuring a harmonic suppression technique, which cancels the 3rd harmonic by shaping the …

This paper demonstrates the implementation of a hybrid polar linear amplification with
nonlinear components (LINC) power amplifier (PA) that uses the combination of polar and …