Transport properties of topological insulators: Band bending, bulk metal-to-insulator transition, and weak anti-localization
We reanalyze some of the critical transport experiments and provide a coherent
understanding of the current generation of topological insulators (TIs). Currently TI transport …
understanding of the current generation of topological insulators (TIs). Currently TI transport …
Emergence of Decoupled Surface Transport Channels in Bulk Insulating Thin Films
In ideal topological insulator (TI) films the bulk state, which is supposed to be insulating,
should not provide any electric coupling between the two metallic surfaces. However …
should not provide any electric coupling between the two metallic surfaces. However …
Topological transport and atomic tunnelling–clustering dynamics for aged Cu-doped Bi2Te3 crystals
T Chen, Q Chen, K Schouteden, W Huang… - Nature …, 2014 - nature.com
Enhancing the transport contribution of surface states in topological insulators is vital if they
are to be incorporated into practical devices. Such efforts have been limited by the defect …
are to be incorporated into practical devices. Such efforts have been limited by the defect …
van der Waals Epitaxial Growth of Atomically Thin Bi2Se3 and Thickness-Dependent Topological Phase Transition
Two-dimensional (2D) atomic-layered heterostructures stacked by van der Waals
interactions recently introduced new research fields, which revealed novel phenomena and …
interactions recently introduced new research fields, which revealed novel phenomena and …
[HTML][HTML] Growth of high-quality Bi2Se3 topological insulators using (Bi1-xInx) 2Se3 buffer layers
In this article, the authors first report on the optimum growth parameters for (Bi 1-x In x) 2 Se
3 alloys of arbitrary composition using molecular beam epitaxy. It is found that smooth …
3 alloys of arbitrary composition using molecular beam epitaxy. It is found that smooth …
Dirac plasmons and beyond: the past, present, and future of plasmonics in 3D topological insulators
We review progress studying unique plasmonics in topological insulators (TIs). First, we
describe exfoliation and deposition synthesis approaches. TI materials have substantially …
describe exfoliation and deposition synthesis approaches. TI materials have substantially …
Gate-tunable coherent transport in Se-capped Bi2Se3 grown on amorphous SiO2/Si
YH Liu, CW Chong, JL Jheng, SY Huang… - Applied Physics …, 2015 - pubs.aip.org
A topological insulator (TI) is an exotic material that has a bulk insulating gap and metallic
surface states with unique spin-momentum locking characteristics. Despite its various …
surface states with unique spin-momentum locking characteristics. Despite its various …
Gate‐Tunable Transport Properties of In Situ Capped Bi2Te3 Topological Insulator Thin Films
P Ngabonziza, MP Stehno, H Myoren… - Advanced electronic …, 2016 - Wiley Online Library
Combining of the ability to prepare high‐quality, intrinsic Bi2Te3 topological insulator thin
films of low carrier density with in situ protective capping, a pronounced, gate‐tunable …
films of low carrier density with in situ protective capping, a pronounced, gate‐tunable …
Comparison of Sn-doped and nonstoichiometric vertical-Bridgman-grown crystals of the topological insulator Bi2Te2Se
A comparative study of the properties of topological insulator Bi 2 Te 2 Se (BTS) crystals
grown by the vertical Bridgeman method is described. Two defect mechanisms that create …
grown by the vertical Bridgeman method is described. Two defect mechanisms that create …
Unraveling the Dirac fermion dynamics of the bulk-insulating topological system
E Papalazarou, L Khalil, M Caputo, L Perfetti… - Physical Review …, 2018 - APS
Using femtosecond time-and angle-resolved photoemission spectroscopy, we explore the
out-of-equilibrium dynamics of surface fermions in the topological system Bi 2 Te 2 Se. We …
out-of-equilibrium dynamics of surface fermions in the topological system Bi 2 Te 2 Se. We …