Principles of plasma discharges and materials processing
MA Lieberman, AJ Lichtenberg - MRS Bulletin, 1994 - cambridge.org
The authors have done an excellent job of clearly explaining the different nomenclature
used in plasma processing, with the meaning of the symbols and constants commonly …
used in plasma processing, with the meaning of the symbols and constants commonly …
On the flicker noise in submicron silicon MOSFETs
E Simoen, C Claeys - Solid-State Electronics, 1999 - Elsevier
An overview is given of recent theoretical concepts and experimental findings with respect to
the flicker or 1/f noise in advanced silicon MOSFETs. First, a summary will be given of the …
the flicker or 1/f noise in advanced silicon MOSFETs. First, a summary will be given of the …
Modeling of defect generation during plasma etching and its impact on electronic device performance—plasma-induced damage
K Eriguchi - Journal of Physics D: Applied Physics, 2017 - iopscience.iop.org
The increasing demand for the higher performance of ultra-large-scale integration (ULSI)
circuits requires the aggressive shrinkage of device feature sizes in accordance with the …
circuits requires the aggressive shrinkage of device feature sizes in accordance with the …
Achieving atomistic control in materials processing by plasma–surface interactions
The continuous down-scaling of electronic devices and the introduction of functionally
improved novel materials require a greater atomic level controllability in the synthesis and …
improved novel materials require a greater atomic level controllability in the synthesis and …
Review of plasma-enhanced atomic layer deposition: Technical enabler of nanoscale device fabrication
With devices being scaled down to the nanometer regime, the need for atomic thickness
control with high conformality is increasing. Atomic layer deposition (ALD) is a key …
control with high conformality is increasing. Atomic layer deposition (ALD) is a key …
Defect generation in electronic devices under plasma exposure: Plasma-induced damage
K Eriguchi - Japanese Journal of Applied Physics, 2017 - iopscience.iop.org
The increasing demand for higher performance of ULSI circuits requires aggressive
shrinkage of device feature sizes in accordance with Moore's law. Plasma processing plays …
shrinkage of device feature sizes in accordance with Moore's law. Plasma processing plays …
Surface processes in low pressure plasmas
GS Oehrlein - Surface Science, 1997 - Elsevier
In many high technology industries low pressure plasmas have become indispensable for
advanced materials processing: the microelectronics industry employs plasma-based …
advanced materials processing: the microelectronics industry employs plasma-based …
Challenges and constraints in designing implantable medical ICs
P Gerrish, E Herrmann, L Tyler… - IEEE Transactions on …, 2005 - ieeexplore.ieee.org
Implantable medical electronics are differentiated from most of the other electronic-system
implementations by their unique combination of extreme low-power and high-reliability …
implementations by their unique combination of extreme low-power and high-reliability …
Interface and plasma damage analysis of PEALD TaCN deposited on HfO2 for advanced CMOS studied by angle resolved XPS and C–V
F Piallat, V Beugin, R Gassilloud, L Dussault… - Applied surface …, 2014 - Elsevier
Plasma enhanced atomic layer deposition (PEALD) TaCN deposited on HfO 2 was studied
by X-ray photoelectron spectroscopy (XPS) to understand the reactions taking place at the …
by X-ray photoelectron spectroscopy (XPS) to understand the reactions taking place at the …
High‐Resolution Printing‐Based Vertical Interconnects for Flexible Hybrid Electronics
Flexible hybrid electronics (FHE) is an emerging area that combines printed electronics and
ultra‐thin chip (UTC) technology to deliver high performance needed in applications such as …
ultra‐thin chip (UTC) technology to deliver high performance needed in applications such as …