Comparative analysis of OFETs materials and devices for sensor applications

B Raj, P Kaur, P Kumar, SS Gill - Silicon, 2022 - Springer
Organic electronics have become an active topic of research in the area of semiconductor
transistors. Organic-field effect transistors (OFET) which uses special organic compounds …

A journey from bulk MOSFET to 3 nm and beyond

A Samal, SL Tripathi, SK Mohapatra - Transactions on Electrical and …, 2020 - Springer
To overcome scaling issues such as controlling gate leakage, drain induced barrier
lowering, higher subthreshold conduction, polysilicon gate depletion, and other short …

Modeling and simulation analysis of SiGe heterojunction double gate vertical t-shaped tunnel FET

S Singh, B Raj - Superlattices and Microstructures, 2020 - Elsevier
This paper deals with a new 2-D analytical surface potential model for heterojunction SiGe
Double Gate Vertical t-shaped Tunnel Field Effect transistor and contemplate the inherit …

Design and investigation of a novel gate-all-around vertical tunnel FET with improved DC and analog/RF parameters

KRN Karthik, CK Pandey - ECS Journal of Solid State Science …, 2022 - iopscience.iop.org
In this paper, a novel structure of gate-all-around vertical TFET (GAA-VTFET) is proposed
and investigated for the first time with the help of 3D TCAD simulator. It is found that GAA …

Design and analysis of double-gate junctionless vertical TFET for gas sensing applications

S Singh, M Khosla, G Wadhwa, B Raj - Applied Physics A, 2021 - Springer
In this present study, junctionless vertical tunnel field-effect transistor (JL-VTFET) with
catalytic metals as gate contacts is proposed for gas sensing applications. The vertical …

Two-dimensional analytical modeling of the surface potential and drain current of a double-gate vertical t-shaped tunnel field-effect transistor

S Singh, B Raj - Journal of Computational Electronics, 2020 - Springer
We present a two-dimensional (2-D) analytical modeling of the surface potential of a double-
gate vertical t-shaped tunnel field-effect transistor (TFET), considering the inherit dual …

Analytical modeling and simulation analysis of T-shaped III-V heterojunction vertical T-FET

S Singh, B Raj - Superlattices and Microstructures, 2020 - Elsevier
In this paper, we have developed a new 2D compact analytical model for surface potential
and drain current for III-V group heterojunction of T-shaped Vertical Tunneling FET with …

Design and simulation of triple metal double-gate germanium on insulator vertical tunnel field effect transistor

T Chawla, M Khosla, B Raj - Microelectronics journal, 2021 - Elsevier
In this paper, a novel Triple metal double gate germanium on insulator vertical TFET is
proposed and investigated by using SILVACO ATLAS TCAD tool. Gate metal work-function …

[HTML][HTML] Highly scalable synthesis of MoS2 thin films for carbon steel coatings: influence of synthetic route on the nanostructure and corrosion performance

SH Aleithan, K Al-Amer, ZH Alabbad, MM Khalaf… - Journal of Materials …, 2023 - Elsevier
Due to its numerous potential applications, molybdenum disulfide (MoS 2; moly), one of the
newly developing transition metals dichalcogenides (TMDCs), has exceptionally drawn high …

Study of parametric variations on hetero-junction vertical t-shape TFET for suppressing ambipolar conduction

S Singh, DB Raj - Indian Journal of Pure & Applied Physics …, 2020 - op.niscpr.res.in
This paper investigates a hetero-junction vertical t-shape tunnel field effect transistor and
discussed various methods for the suppression of ambipolar conduction for the first-time …