Band alignment at interfaces of two-dimensional materials: internal photoemission analysis

VV Afanas'ev, G Delie, M Houssa… - Journal of Physics …, 2020 - iopscience.iop.org
The article overviews experimental results obtained by applying internal photoemission
(IPE) spectroscopy methods to characterize electron states in single-or few-monolayer thick …

Exploring the optoelectronic properties of SnSe: a new insight

M Kumar, S Rani, P Vashishtha, G Gupta… - Journal of Materials …, 2022 - pubs.rsc.org
Tin selenide has established its sound presence among 2D materials. A recent trend in the
thermoelectric application study of this material has led to ignoring its optoelectronic …

Energy efficient photonic memory based on electrically programmable embedded III-V/Si memristors: switches and filters

S Cheung, B Tossoun, Y Yuan, Y Peng, Y Hu… - Communications …, 2024 - nature.com
Over the past few years, extensive work on optical neural networks has been investigated in
hopes of achieving orders of magnitude improvement in energy efficiency and compute …

Charge Redistribution Mechanisms in SnSe2 Surfaces Exposed to Oxidative and Humid Environments and Their Related Influence on Chemical Sensing

G D'Olimpio, F Genuzio, TO Mentes… - The Journal of …, 2020 - ACS Publications
Tin diselenide (SnSe2) is a van der Waals semiconductor, which spontaneously forms a
subnanometric SnO2 skin once exposed to air. Here, by means of surface-science …

Impact of structural and optical properties tunability of SnSe2 thin films on its optoelectronic properties

AM El-Mahalawy, SA Mansour, AR Wassel… - Surfaces and …, 2022 - Elsevier
As a result of the precise controllability of the properties of tin diselenide and the possibility
of harmonious integration with silicon technology in many applications. Attention was …

Next-generation self-powered and ultrafast photodetectors based on III-nitride hybrid structures

R Pant, DK Singh, AM Chowdhury, B Roul, KK Nanda… - APL Materials, 2020 - pubs.aip.org
Energy consumption is one of the most important aspects of any electronic device which
needs further improvements in order to achieve a better sustainable future. This is equally …

2D-SnSe2 nanoflakes on paper with 1D-NiO gate insulator based MISFET as multifunctional NIR photo switch and flexible temperature sensor

S Veeralingam, S Badhulika - Materials Science in Semiconductor …, 2020 - Elsevier
In this work, we report a simple, low cost, facile fabrication of a SnSe 2 based high mobility
Metal-Insulator-Semiconductor-Field-effect-transistor (MISFET) using an unconventional …

Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus–SnSe2 Heterostructure

J Na, Y Kim, JH Smet, M Burghard… - ACS applied materials & …, 2019 - ACS Publications
Tunneling field-effect transistors (TFETs) are of considerable interest owing to their
capability of low-power operation. Here, we demonstrate a novel type of TFET which is …

Self-power position-sensitive detector with fast optical relaxation time and large position sensitivity basing on the lateral photovoltaic effect in tin diselenide films

T Xu, Y Han, L Lin, J Xu, Q Fu, H He, B Song… - Journal of Alloys and …, 2019 - Elsevier
Layered tin diselenide (SnSe 2) is of high interest to material scientists because it is an n-
type semiconductor with a narrow bandgap. In this letter, we prepared single-phase SnSe 2 …

Non-volatile heterogeneous III-V/Si photonics via optical charge-trap memory

S Cheung, D Liang, Y Yuan, Y Peng, Y Hu… - arXiv preprint arXiv …, 2023 - arxiv.org
We demonstrate, for the first time, non-volatile charge-trap flash memory (CTM) co-located
with heterogeneous III-V/Si photonics. The wafer-bonded III-V/Si CTM cell facilitates non …