Band alignment at interfaces of two-dimensional materials: internal photoemission analysis
VV Afanas'ev, G Delie, M Houssa… - Journal of Physics …, 2020 - iopscience.iop.org
The article overviews experimental results obtained by applying internal photoemission
(IPE) spectroscopy methods to characterize electron states in single-or few-monolayer thick …
(IPE) spectroscopy methods to characterize electron states in single-or few-monolayer thick …
Exploring the optoelectronic properties of SnSe: a new insight
Tin selenide has established its sound presence among 2D materials. A recent trend in the
thermoelectric application study of this material has led to ignoring its optoelectronic …
thermoelectric application study of this material has led to ignoring its optoelectronic …
Energy efficient photonic memory based on electrically programmable embedded III-V/Si memristors: switches and filters
Over the past few years, extensive work on optical neural networks has been investigated in
hopes of achieving orders of magnitude improvement in energy efficiency and compute …
hopes of achieving orders of magnitude improvement in energy efficiency and compute …
Charge Redistribution Mechanisms in SnSe2 Surfaces Exposed to Oxidative and Humid Environments and Their Related Influence on Chemical Sensing
G D'Olimpio, F Genuzio, TO Mentes… - The Journal of …, 2020 - ACS Publications
Tin diselenide (SnSe2) is a van der Waals semiconductor, which spontaneously forms a
subnanometric SnO2 skin once exposed to air. Here, by means of surface-science …
subnanometric SnO2 skin once exposed to air. Here, by means of surface-science …
Impact of structural and optical properties tunability of SnSe2 thin films on its optoelectronic properties
AM El-Mahalawy, SA Mansour, AR Wassel… - Surfaces and …, 2022 - Elsevier
As a result of the precise controllability of the properties of tin diselenide and the possibility
of harmonious integration with silicon technology in many applications. Attention was …
of harmonious integration with silicon technology in many applications. Attention was …
Next-generation self-powered and ultrafast photodetectors based on III-nitride hybrid structures
Energy consumption is one of the most important aspects of any electronic device which
needs further improvements in order to achieve a better sustainable future. This is equally …
needs further improvements in order to achieve a better sustainable future. This is equally …
2D-SnSe2 nanoflakes on paper with 1D-NiO gate insulator based MISFET as multifunctional NIR photo switch and flexible temperature sensor
S Veeralingam, S Badhulika - Materials Science in Semiconductor …, 2020 - Elsevier
In this work, we report a simple, low cost, facile fabrication of a SnSe 2 based high mobility
Metal-Insulator-Semiconductor-Field-effect-transistor (MISFET) using an unconventional …
Metal-Insulator-Semiconductor-Field-effect-transistor (MISFET) using an unconventional …
Gate-Tunable Tunneling Transistor Based on a Thin Black Phosphorus–SnSe2 Heterostructure
J Na, Y Kim, JH Smet, M Burghard… - ACS applied materials & …, 2019 - ACS Publications
Tunneling field-effect transistors (TFETs) are of considerable interest owing to their
capability of low-power operation. Here, we demonstrate a novel type of TFET which is …
capability of low-power operation. Here, we demonstrate a novel type of TFET which is …
Self-power position-sensitive detector with fast optical relaxation time and large position sensitivity basing on the lateral photovoltaic effect in tin diselenide films
Layered tin diselenide (SnSe 2) is of high interest to material scientists because it is an n-
type semiconductor with a narrow bandgap. In this letter, we prepared single-phase SnSe 2 …
type semiconductor with a narrow bandgap. In this letter, we prepared single-phase SnSe 2 …
Non-volatile heterogeneous III-V/Si photonics via optical charge-trap memory
We demonstrate, for the first time, non-volatile charge-trap flash memory (CTM) co-located
with heterogeneous III-V/Si photonics. The wafer-bonded III-V/Si CTM cell facilitates non …
with heterogeneous III-V/Si photonics. The wafer-bonded III-V/Si CTM cell facilitates non …