GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …

(Si) GeSn semiconductors are finally coming of age after a long gestation period. The
demonstration of device-quality epi-layers and quantum-engineered heterostructures has …

Silicon photonics continues to progress tremendously, both in near-infrared
datacom/telecoms and in mid-IR optical sensing, despite the fact a monolithically integrated …

The availability of high-frequency pulsed emitters in the 2–2.5 μm wavelength range paved
the way for a wealth of new applications in ultrafast spectroscopy, free-space and fiber …

Recent development of group-IV alloy GeSn indicates its bright future for the application of
mid-infrared Si photonics. Relaxed GeSn with high material quality and high Sn composition …

GeSn alloys are promising materials for light emitters monolithically grown on silicon. In this
work, we demonstrate room temperature (RT) lasing in a GeSn hetero-structure with 17.2 …

We investigate the effect of strain on the morphology and composition of GeSn layers grown
on Ge/Si virtual substrates. By using buffer layers with controlled thickness and Sn content …

We demonstrate lasing up to 230 K in a GeSn heterostructure micro-disk cavity. The GeSn
16.0% optically active layer was grown on a step-graded GeSn buffer, limiting the density of …

GeSn alloys are nowadays considered as the most promising materials to build Group IV
laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible …

The simultaneous control of lattice strain, composition, and microstructure is crucial to
establish high-quality, direct bandgap GeSn semiconductors. Herein, we demonstrate that …