Review of highly mismatched III-V heteroepitaxy growth on (001) silicon
Y Du, B Xu, G Wang, Y Miao, B Li, Z Kong, Y Dong… - Nanomaterials, 2022 - mdpi.com
Si-based group III-V material enables a multitude of applications and functionalities of the
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …
Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics
Monolithic integration of III-V on silicon has been a scientifically appealing concept for
decades. Notable progress has recently been made in this research area, fueled by …
decades. Notable progress has recently been made in this research area, fueled by …
Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si (001)
The integration of III-V on silicon is still a hot topic as it will open up a way to co-integrate Si
CMOS logic with photonic devices. To reach this aim, several hurdles should be solved, and …
CMOS logic with photonic devices. To reach this aim, several hurdles should be solved, and …
GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction
The Aspect Ratio Trapping technique has been extensively evaluated for improving the
quality of III-V heteroepitaxial films grown on Si, due to the potential for terminating defects at …
quality of III-V heteroepitaxial films grown on Si, due to the potential for terminating defects at …
Recent Advances on Metal Oxide Based Sensors for Environmental Gas Pollutants Detection
S Kanan, K Obeideen, M Moyet, H Abed… - Critical Reviews in …, 2024 - Taylor & Francis
Optimizing materials and associated structures for detecting various environmental gas
pollutant concentrations has been a major challenge in environmental sensing technology …
pollutant concentrations has been a major challenge in environmental sensing technology …
Border Trap Characterizations of Al2O3/ZrO2 and Al2O3/HfO2 Bilayer Films Based on Ambient Post Metal Annealing and Constant Voltage Stress
This study represents a comparison of the border trap behavior and reliability between HfO2
and ZrO2 films on n-In0. 53Ga0. 47As with an Al2O3 interfacial layer. The effect of different …
and ZrO2 films on n-In0. 53Ga0. 47As with an Al2O3 interfacial layer. The effect of different …
Investigation of Hydrogen Flux Influence on InGaP Layer and Device Uniformity
S Yang, N Guo, S Zhao, Y Li, M Wei, Y Zhang, X Liu - Electronics, 2024 - mdpi.com
In this study, we conduct a comprehensive examination of the influence of hydrogen (H2)
carrier gas flux on the uniformity of epitaxial layers, specifically focusing on the InGaP single …
carrier gas flux on the uniformity of epitaxial layers, specifically focusing on the InGaP single …
Growth of III–V semiconductors and lasers on silicon substrates by MOCVD
Long-lasting efforts have been devoted to perfecting the crystalline quality of III–V compound
semiconductors on silicon substrates, where epitaxial growth by MOCVD systems is of …
semiconductors on silicon substrates, where epitaxial growth by MOCVD systems is of …
Comparison of the interface and border traps of nanolaminate and bilayer structures of Al2O3 and HfO2 on In0. 53Ga0. 47As
This study is a comparison of interface and border traps of nanolaminate and bilayer
structures of Al 2 O 3 and HfO 2 with those of single layers on an In 0.53 Ga 0.47 As …
structures of Al 2 O 3 and HfO 2 with those of single layers on an In 0.53 Ga 0.47 As …
Coalescence of planar GaAs nanowires into strain-free three-dimensional crystals on exact (001) silicon
We report three dimensional (3D) disk-shaped GaAs crystals on V-groove patterned (001) Si
substrates by metalorganic chemical vapor deposition. Planar GaAs nanowires with …
substrates by metalorganic chemical vapor deposition. Planar GaAs nanowires with …