Engineering applications of FPGAs

E Tlelo-Cuautle, LG De La Fraga… - … Applications of FP-GAs, 2016 - Springer
Field-programmable gate arrays (FPGAs) were invented in 1984 by Ross Freeman.
Basically, it is a semiconductor consisting of programmable logic blocks that can be used to …

[HTML][HTML] Fractional-order circuit design with hybrid controlled memristors and FPGA implementation

X Zhang, G Yang, S Liu, AJ Moshayedi - AEU-International Journal of …, 2022 - Elsevier
A hybrid memristor circuit consisting of a magnetic-controlled and a charge-controlled is
designed. In order to construct a relatively complex dynamical system, an absolute value …

Implementation of the simple hyperchaotic memristor circuit with attractor evolution and large-scale parameter permission

G Yang, X Zhang, AJ Moshayedi - Entropy, 2023 - mdpi.com
A novel, simple, four-dimensional hyperchaotic memristor circuit consisting of two
capacitors, an inductor and a magnetically controlled memristor is designed. Three …

Look-ahead mapping of Boolean functions in memristive crossbar array

DN Yadav, PL Thangkhiew, K Datta - Integration, 2019 - Elsevier
Memristors have drawn the attention of researchers due to their unique non-volatile and
logic design capabilities. Combining these two, a concept called in-memory computing has …

A crossbar resistance switching memory readout scheme with sneak current cancellation based on a two-port current-mode sensing

W Bae, KJ Yoon, CS Hwang, DK Jeong - Nanotechnology, 2016 - iopscience.iop.org
This paper describes a novel readout scheme that enables the complete cancellation of
sneak currents in resistive switching random-access memory (RRAM) crossbar array. The …

Low energy non-volatile look-up table using 2 bit ReRAM for field programmable gate array

HL Chee, TN Kumar, HAF Almurib - Semiconductor Science and …, 2022 - iopscience.iop.org
A low energy non-volatile look-up table (NV-LUT) consisting of 2 bit resistive random-access
memories (2 bit ReRAMs) for field-programmable gate arrays (FPGAs) is investigated in this …

Electrical model of multi-level bipolar Ta2O5/TaOx Bi-layered ReRAM

HL Chee, TN Kumar, HAF Almurib - Microelectronics Journal, 2019 - Elsevier
An electrical model of a multi-level Ta 2 O 5/TaO x resistive random-access memory
(ReRAM) has been presented. The model is based on tunnelling current which is the …

Multifilamentary conduction modelling of bipolar Ta2O5/TaOx bi-layered RRAM

HL Chee, TN Kumar, HA Almurib - 2018 IEEE 7th Non-Volatile …, 2018 - ieeexplore.ieee.org
This paper presents an analytical model for multi-filamentary resistive switching of a bipolar
Ta2O5/TaOx bi-layered resistive random-access memory (RRAM) based on tunnelling …

A ReRAM-based nonvolatile FPGA

HL Chee, TN Kumar… - 2022 IEEE 20th Student …, 2022 - ieeexplore.ieee.org
Modern challenges in electronics engineering include the need for massive scale
computation devices that are energy-efficient. Conventional digital memory devices such as …

Memristors: A journey from material engineering to beyond von-neumann computing

C de Souza Dias, PF Butzen - Journal of Integrated Circuits and Systems, 2021 - jics.org.br
Memristors are a promising building block to the next generation of computing systems.
Since 2008, when the physical implementation of a memristor was first postulated, the …