Epitaxy of hexagonal ABO3 quantum materials

J Nordlander, MA Anderson, CM Brooks… - Applied Physics …, 2022 - pubs.aip.org
Hexagonal ABO 3 oxides (A, B= cation) are a class of rich materials for realizing novel
quantum phenomena. Their hexagonal symmetry, oxygen trigonal bipyramid coordination …

Critical role of interface design in acceleration of overall water splitting and hybrid electrolysis process: state of the art and perspectives

S Behera, S Ganguly, C Loha, B Mondal… - Energy & Fuels, 2023 - ACS Publications
Electrocatalytic water splitting to hydrogen (H2) is an ideal approach to generate renewable
energy. One of the major drawbacks is the tightly coupled kinetically sluggish and energy …

Homojunction for biomass photorefinery

X Yu, H Zhao, J Hu, Z Chen - Chemical Engineering Journal, 2024 - Elsevier
Separation of photogenerated electrons and holes is the essential factor in determining the
quantum efficiency of photocatalysis. Constructing heterojunction structure by combining two …

In situ lattice tuning of quasi-single-crystal surfaces for continuous electrochemical modulation

BF Zeng, JY Wei, XG Zhang, QM Liang, S Hu… - Chemical …, 2022 - pubs.rsc.org
The ability to control the atomic-level structure of a solid represents a straightforward
strategy for fabricating high-performance catalysts and semiconductor materials. Herein we …

Atomically engineered cobaltite layers for robust ferromagnetism

S Chen, Q Zhang, X Li, J Zhao, S Lin, Q Jin, H Hong… - Science …, 2022 - science.org
Emergent phenomena at heterointerfaces are directly associated with the bonding geometry
of adjacent layers. Effective control of accessible parameters, such as the bond length and …

Terrace engineering of the buffer layer: laying the foundation of thick GaN drift layer on Si substrates

Z Chen, X Yang, X Liu, J Shen, Z Cai… - Advanced Electronic …, 2023 - Wiley Online Library
Abstract Vertical GaN‐on‐Si devices are promising for the next‐generation high‐voltage
power electronics with low cost and high efficiency. However, their applications are impeded …

Deep-level transient spectroscopy analysis of interface defects in Ce: ZnO/p-Si heterostructures

HO Öztel, N Akçay, G Algün - Journal of Materials Science: Materials in …, 2024 - Springer
This study reports the investigation of the effect of cerium (Ce) dopant concentration on
defect levels in Ce-doped ZnO/p-type Si (p-Si) heterojunctions (HJs) by deep-level transient …

Effect of charge transfer on band alignment in 2D|3D heterostructures: A study of interfaces

NT Taylor, SP Hepplestone - Physical Review B, 2023 - APS
HfS 2| HfO 2 interfaces present a uniquely interesting study in band alignment. The band
alignment between materials determines the viability of many electronic devices. We have …

Fast Prediction of Ionic Epitaxial Interfaces with Ogre Demonstrated for Colloidal Heterostructures of Lead Halide Perovskites

S Toso, D Dardzinski, L Manna, N Marom - 2024 - chemrxiv.org
Colloidal epitaxial heterostructures are nanoparticles composed of two different materials
connected at an interface, which can exhibit properties different from those of their individual …