Epitaxy of hexagonal ABO3 quantum materials
J Nordlander, MA Anderson, CM Brooks… - Applied Physics …, 2022 - pubs.aip.org
Hexagonal ABO 3 oxides (A, B= cation) are a class of rich materials for realizing novel
quantum phenomena. Their hexagonal symmetry, oxygen trigonal bipyramid coordination …
quantum phenomena. Their hexagonal symmetry, oxygen trigonal bipyramid coordination …
Critical role of interface design in acceleration of overall water splitting and hybrid electrolysis process: state of the art and perspectives
Electrocatalytic water splitting to hydrogen (H2) is an ideal approach to generate renewable
energy. One of the major drawbacks is the tightly coupled kinetically sluggish and energy …
energy. One of the major drawbacks is the tightly coupled kinetically sluggish and energy …
Homojunction for biomass photorefinery
Separation of photogenerated electrons and holes is the essential factor in determining the
quantum efficiency of photocatalysis. Constructing heterojunction structure by combining two …
quantum efficiency of photocatalysis. Constructing heterojunction structure by combining two …
In situ lattice tuning of quasi-single-crystal surfaces for continuous electrochemical modulation
The ability to control the atomic-level structure of a solid represents a straightforward
strategy for fabricating high-performance catalysts and semiconductor materials. Herein we …
strategy for fabricating high-performance catalysts and semiconductor materials. Herein we …
Atomically engineered cobaltite layers for robust ferromagnetism
Emergent phenomena at heterointerfaces are directly associated with the bonding geometry
of adjacent layers. Effective control of accessible parameters, such as the bond length and …
of adjacent layers. Effective control of accessible parameters, such as the bond length and …
Terrace engineering of the buffer layer: laying the foundation of thick GaN drift layer on Si substrates
Z Chen, X Yang, X Liu, J Shen, Z Cai… - Advanced Electronic …, 2023 - Wiley Online Library
Abstract Vertical GaN‐on‐Si devices are promising for the next‐generation high‐voltage
power electronics with low cost and high efficiency. However, their applications are impeded …
power electronics with low cost and high efficiency. However, their applications are impeded …
Deep-level transient spectroscopy analysis of interface defects in Ce: ZnO/p-Si heterostructures
This study reports the investigation of the effect of cerium (Ce) dopant concentration on
defect levels in Ce-doped ZnO/p-type Si (p-Si) heterojunctions (HJs) by deep-level transient …
defect levels in Ce-doped ZnO/p-type Si (p-Si) heterojunctions (HJs) by deep-level transient …
Effect of charge transfer on band alignment in 2D|3D heterostructures: A study of interfaces
NT Taylor, SP Hepplestone - Physical Review B, 2023 - APS
HfS 2| HfO 2 interfaces present a uniquely interesting study in band alignment. The band
alignment between materials determines the viability of many electronic devices. We have …
alignment between materials determines the viability of many electronic devices. We have …
Fast Prediction of Ionic Epitaxial Interfaces with Ogre Demonstrated for Colloidal Heterostructures of Lead Halide Perovskites
Colloidal epitaxial heterostructures are nanoparticles composed of two different materials
connected at an interface, which can exhibit properties different from those of their individual …
connected at an interface, which can exhibit properties different from those of their individual …