The gain spectrum and modulation characteristics of ridge-waveguide laser diodes with
InAs/GaAs submonolayer (SML) stacks have been investigated in detail. A comparison …

Fifty years after the invention of the laser diode, and forty years after the butterfly effect
signified the unpredictability of deterministic chaos, it is commonly believed that a laser …

Progress of high‐speed vertical cavity surface emitting lasers (VCSEL) operating around
980 nm is reviewed. A special focus is on their applications for future short‐reach optical …

Semiconductor quantum dots (QD) have been extensively applied in optical and
optoelectronic devices because of their strong quantum confinement and bandgap …

We report on the design, fabrication, and evaluation of large-aperture, oxide-confined 850
nm vertical cavity surface emitting lasers (VCSELs) with high modulation bandwidth at low …

We demonstrate the physical generation of random bits at high bit rates (> 100 Gb/s) using
optical chaos from a solitary laser diode and therefore without the complex addition of either …

Self-organized In (Ga) As/Ga (Al) As quantum dots have emerged as useful nanostructures
that can be epitaxially grown and incorporated in the active region of devices. The near …

Invention of non-disruptive fabrication technologies for semiconductor quantum dots
presented a dream for generations of semiconductor device engineers. Today, such …

We report on the design and performance of multi-stack InAs/InGaAs sub-monolayer (SML)
quantum dots (QD) based infrared photodetectors (SML-QDIP). SML-QDIPs are grown with …

We describe the concept of the submonolayer quantum dot infrared photodetector (SML
QDIP) and report experimental device results on long-wavelength infrared detection. An …