Recent developments in TiO2 as n- and p-type transparent semiconductors: synthesis, modification, properties, and energy-related applications
VC Anitha, AN Banerjee, SW Joo - Journal of materials science, 2015 - Springer
TiO 2-based thin films and nanomaterials have been fabricated via physical and solution-
based techniques by various research groups around the globe. Generally, most …
based techniques by various research groups around the globe. Generally, most …
Shining light on materials—A self-sterilising revolution
This review focuses on the development of light activated antimicrobial surfaces. These
surfaces kill microbes by the action of light and have potential applications in domestic and …
surfaces kill microbes by the action of light and have potential applications in domestic and …
Hafnium tantalum titanium oxide films
KY Ahn, L Forbes - US Patent 7,592,251, 2009 - Google Patents
Embodiments of a dielectric layer containing a hafnium tantalum titanium oxide film
structured as one or more monolayers include the dielectric layer disposed in an integrated …
structured as one or more monolayers include the dielectric layer disposed in an integrated …
Electronic apparatus with deposited dielectric layers
KY Ahn, L Forbes - US Patent 7,405,454, 2008 - Google Patents
4,058.430 4,096,227 4,137,200 4,215,156 4,293,679 4,302,620 4,308.421 4.333, 808
4,358,397 4,368,350 4,372,032 4,394,673 4,399,424 4,403,083 4.413, 022 4,482,516 …
4,358,397 4,368,350 4,372,032 4,394,673 4,399,424 4,403,083 4.413, 022 4,482,516 …
Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations
Doping techniques have been widely investigated to improve the performance and reliability
of resistive random-access memory. In this paper, oxide phases, non-stoichiometry, and …
of resistive random-access memory. In this paper, oxide phases, non-stoichiometry, and …
Effect of the addition of different doping agents on visible light activity of porous TiO2 photocatalysts
The influence of the addition of different doping agents (N, W and Hf) on the macroporous
TiO 2 photoactivity toward the Rhodamine B degradation and ethanol photo-oxidation was …
TiO 2 photoactivity toward the Rhodamine B degradation and ethanol photo-oxidation was …
Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition
The impact of 8-to 45-at.% Ti on physical and electrical characteristics of atomic-layer-
deposited and annealed hafnium dioxide was studied using vacuum-ultraviolet …
deposited and annealed hafnium dioxide was studied using vacuum-ultraviolet …
Review and Perspective of Hf-based High-k Gate Dielectrics on Silicon
G He, Z Sun, G Li, L Zhang - Critical Reviews in Solid State and …, 2012 - Taylor & Francis
HfO2 has been recently highlighted as the most promising high-k dielectrics for the next-
generation CMOS device applications due to its relatively high dielectric constant and …
generation CMOS device applications due to its relatively high dielectric constant and …
Different current conduction mechanisms through thin high-k films due to the varying Hf to Ti ratio
A Paskaleva, AJ Bauer, M Lemberger… - Journal of applied …, 2004 - pubs.aip.org
We have investigated the electrical behavior of high permittivity (high-k) hafnium–titanium–
silicate (Hf x Ti y Si z O) layers with different Hf: Ti ratios in the films. The films are prepared …
silicate (Hf x Ti y Si z O) layers with different Hf: Ti ratios in the films. The films are prepared …
Influence of electrostriction and voltage-induced screening effects on the tunnel electroresistance in tunnel junctions with composite ferroelectric barriers
The electron transport characteristics of magnetic and non-magnetic ferroelectric tunnel
junctions based on Hf 0.5 Zr 0.5 O 2 are investigated in this study. A modified linear …
junctions based on Hf 0.5 Zr 0.5 O 2 are investigated in this study. A modified linear …