The Boltzmann distribution of electrons poses a fundamental barrier to lowering energy
dissipation in conventional electronics, often termed as Boltzmann Tyranny,,,,. Negative …

Over the decades since ferroelectricity was revealed, ferroelectric materials have emerged
as a cornerstone for a wide spectrum of semiconductor technology and electronic device …

We demonstrate room-temperature negative capacitance in a ferroelectric–dielectric
superlattice heterostructure. In epitaxially grown superlattice of ferroelectric BSTO (Ba0 …

Improving the energy efficiency of electronics is one of the grand challenges of
semiconductor device physics, as global energy consumption by electronics grows in …

The electrostatic pull-in effect is a common phenomenon and a key parameter in the design
of microscale and nanoscale devices. Flexible electronic devices based on the pull-in effect …

Owing to the fundamental physics of the Boltzmann distribution, the ever-increasing power
dissipation in nanoscale transistors threatens an end to the almost-four-decade-old cadence …

Q-factor is a reasonable index to investigate the integrity of circuits or devices in terms of
their energy or charge storage capabilities. We use this figure of merit to explore the …

Abstract The Fermi-Dirac thermal excitation of electrons at room temperature has been a
significant limitation to many technologically important phenomena such as single electron …

In this thesis we investigated the use of suspended graphene in nano-electromechanical
variable capacitors (varactors) and other devices. The superior electrical and mechanical …

The inability to scale down the supply voltage of transistors has been a limiting factor that
leads to excessive power consumption. The supply voltage is forced to remain at a high …