Low-frequency noise in downscaled silicon transistors: Trends, theory and practice
O Marinov, MJ Deen, JA Jiménez-Tejada - Physics Reports, 2022 - Elsevier
By the continuing downscaling of sub-micron transistors in the range of few to sub-
decananometers, we focus on the increasing relative level of the low-frequency noise in …
decananometers, we focus on the increasing relative level of the low-frequency noise in …
System level analysis of fast, per-core DVFS using on-chip switching regulators
W Kim, MS Gupta, GY Wei… - 2008 IEEE 14th …, 2008 - ieeexplore.ieee.org
Portable, embedded systems place ever-increasing demands on high-performance, low-
power microprocessor design. Dynamic voltage and frequency scaling (DVFS) is a well …
power microprocessor design. Dynamic voltage and frequency scaling (DVFS) is a well …
Nonvolatile magnetic flip-flop for standby-power-free SoCs
N Sakimura, T Sugibayashi… - IEEE Journal of Solid …, 2009 - ieeexplore.ieee.org
This paper presents a new nonvolatile magnetic flip-flop (MFF) for standby-power-critical
applications. An MFF primitive cell for design libraries has been developed using 150 nm …
applications. An MFF primitive cell for design libraries has been developed using 150 nm …
Innovative materials, devices, and CMOS technologies for low-power mobile multimedia
T Skotnicki, C Fenouillet-Beranger… - IEEE transactions on …, 2007 - ieeexplore.ieee.org
The paradigm and the usage of CMOS are changing, and so are the requirements at all
levels, from transistor to an entire CMOS system. The traditional drivers, such as speed and …
levels, from transistor to an entire CMOS system. The traditional drivers, such as speed and …
[图书][B] Low-power electronics design
C Piguet - 2018 - books.google.com
The power consumption of integrated circuits is one of the most problematic considerations
affecting the design of high-performance chips and portable devices. The study of power …
affecting the design of high-performance chips and portable devices. The study of power …
Power gating: Circuits, design methodologies, and best practice for standard-cell VLSI designs
Power Gating has become one of the most widely used circuit design techniques for
reducing leakage current. Its concept is very simple, but its application to standard-cell VLSI …
reducing leakage current. Its concept is very simple, but its application to standard-cell VLSI …
A multi-mode power gating structure for low-voltage deep-submicron CMOS ICs
S Kim, SV Kosonocky, DR Knebel… - … on Circuits and …, 2007 - ieeexplore.ieee.org
Most existing power gating structures provide only one power-saving mode. We propose a
novel power gating structure that supports both a cutoff mode and an intermediate power …
novel power gating structure that supports both a cutoff mode and an intermediate power …
SRAM cell with intrinsically high stability and low leakage
LT Clark, SA Badrudduza - US Patent 7,920,409, 2011 - Google Patents
(57) ABSTRACT A Static Random Access Memory (SRAM) cell having high stability and low
leakage is provided. The SRAM cell includes a pair of cross-coupled inverters providing …
leakage is provided. The SRAM cell includes a pair of cross-coupled inverters providing …
Optimizing radiation hard by design SRAM cells
LT Clark, KC Mohr, KE Holbert, X Yao… - IEEE transactions on …, 2007 - ieeexplore.ieee.org
Various radiation hardened by design SRAM cells are explored for their size, electrical
performance, and total ionizing dose (TID) immunity. TID experiments using Co-60 testing …
performance, and total ionizing dose (TID) immunity. TID experiments using Co-60 testing …
Techniques to Extend Canary-Based Standby Scaling for SRAMs to 45 nm and Beyond
J Wang, BH Calhoun - IEEE Journal of Solid-State Circuits, 2008 - ieeexplore.ieee.org
VDD scaling is an efficient technique to reduce SRAM leakage power during standby mode.
The data retention voltage (DRV) defines the minimum VDD that can be applied to an SRAM …
The data retention voltage (DRV) defines the minimum VDD that can be applied to an SRAM …