In this review, we report several rational designs of nanowire-based solar cells from single
nanowire to nanowire arrays. Two methods of nanowires fabrication: via'top …

As research interest moves from micromaterials to nanomaterials and quantum structures,
the surface energy of the structures has an increasing impact on the nanomaterial growth …

Using nanowires for photodetection constitutes an opportunity to enhance the absorption
efficiency while reducing the electrical cross-section of the device. Nanowires present …

The local integration of III–Vs on Si is relevant for a wide range of applications in electronics
and photonics, since it combines a mature and established materials platform with desired …

Realizing single photon sources emitting in the telecom band on silicon substrates is
essential to reach complementary-metal–oxide–semiconductor (CMOS) compatible devices …

Au-seeded semiconductor nanowires have classically been considered to only grow in a
layer-by-layer growth mode, where individual layers nucleate and grow one at a time with an …

Selective area growth (SAG) of nanowires and networks promise a route toward scalable
electronics, photonics, and quantum devices based on III-V semiconductor materials. The …

Transmission electron microscopy (TEM) offers an ample range of complementary
techniques which are able to provide essential information about the physical, chemical and …

Controlling the strain level in nanowire heterostructures is critical for obtaining coherent
interfaces of high crystalline quality and for the setting of functional properties such as …

The radius of III–V nanowires is known to have an effect on the resulting crystal structure
during particle-assisted growth; however, the causes behind this effect remain under debate …