Atomic layer deposition of metal oxides and chalcogenides for high performance transistors

C Shen, Z Yin, F Collins, N Pinna - Advanced Science, 2022 - Wiley Online Library
Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality
thin film materials at the nanoscale for applications in transistors. This review …

Stability of quantum dot-sensitized solar cells: A review and prospects

AS Rasal, S Yadav, AA Kashale, A Altaee, JY Chang - Nano Energy, 2022 - Elsevier
With state‐of‐the‐art quantum dot-sensitized solar cells (QDSSCs) surpassing 15% of
power conversion efficiencies (PCEs). Despite current advancements in this field, the poor …

Ultrathin self-powered heavy-metal-free Cu–In–Se quantum dot photodetectors for wearable health monitoring

S Li, JH Jang, W Chung, H Seung, SI Park, H Ma… - ACS …, 2023 - ACS Publications
Mechanically deformable photodetectors (PDs) are key device components for wearable
health monitoring systems based on photoplethysmography (PPG). Achieving high …

High‐Performance Solution‐Processed 2D P‐Type WSe2 Transistors and Circuits through Molecular Doping

T Zou, HJ Kim, S Kim, A Liu, MY Choi… - Advanced …, 2023 - Wiley Online Library
Semiconducting ink based on 2D single‐crystal flakes with dangling‐bond‐free surfaces
enables the implementation of high‐performance devices on form‐free substrates by cost …

Engineering colloidal semiconductor nanocrystals for quantum information processing

J Almutlaq, Y Liu, WJ Mir, RP Sabatini… - Nature …, 2024 - nature.com
Quantum information processing—which relies on spin defects or single-photon emission—
has shown quantum advantage in proof-of-principle experiments including microscopic …

P- and N-type InAs nanocrystals with innately controlled semiconductor polarity

JI Yoon, H Kim, M Kim, H Cho, YA Kwon, M Choi… - Science …, 2023 - science.org
InAs semiconductor nanocrystals (NCs) exhibit intriguing electrical/optoelectronic properties
suitable for next-generation electronic devices. Although there is a need for both n-and p …

High-Affinity Ligand-Enhanced Passivation of Group III–V Colloidal Quantum Dots for Sensitive Near-Infrared Photodetection

BK Jung, H Yoo, B Seo, HJ Choi, YK Choi… - ACS Energy …, 2024 - ACS Publications
Group III–V colloidal quantum dots (CQDs) are promising infrared-absorbing materials that
overcome the limitations of their regulated heavy-metal-containing counterparts, including …

Evolution of low-dimensional material-based field-effect transistors

W Ahmad, Y Gong, G Abbas, K Khan, M Khan, G Ali… - Nanoscale, 2021 - pubs.rsc.org
Field-effect transistors (FETs) have tremendous applications in the electronics industry due
to their outstanding features such as small size, easy fabrication, compatibility with …

Molecular‐Switch‐Embedded Solution‐Processed Semiconductors

SH Yu, SZ Hassan, C So, M Kang… - Advanced …, 2023 - Wiley Online Library
Recent improvements in the performance of solution‐processed semiconductor materials
and optoelectronic devices have shifted research interest to the diversification/advancement …

Near-infrared-active copper molybdenum sulfide nanocubes for phonon-mediated clearance of Alzheimer's β-amyloid aggregates

J Jang, CB Park - ACS Applied Materials & Interfaces, 2021 - ACS Publications
Ternary chalcogenide materials have attracted significant interest in recent years because of
their unique physicochemical and optoelectronic properties without relying on precious …