Atomic layer deposition of metal oxides and chalcogenides for high performance transistors
Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality
thin film materials at the nanoscale for applications in transistors. This review …
thin film materials at the nanoscale for applications in transistors. This review …
Stability of quantum dot-sensitized solar cells: A review and prospects
With state‐of‐the‐art quantum dot-sensitized solar cells (QDSSCs) surpassing 15% of
power conversion efficiencies (PCEs). Despite current advancements in this field, the poor …
power conversion efficiencies (PCEs). Despite current advancements in this field, the poor …
Ultrathin self-powered heavy-metal-free Cu–In–Se quantum dot photodetectors for wearable health monitoring
Mechanically deformable photodetectors (PDs) are key device components for wearable
health monitoring systems based on photoplethysmography (PPG). Achieving high …
health monitoring systems based on photoplethysmography (PPG). Achieving high …
High‐Performance Solution‐Processed 2D P‐Type WSe2 Transistors and Circuits through Molecular Doping
Semiconducting ink based on 2D single‐crystal flakes with dangling‐bond‐free surfaces
enables the implementation of high‐performance devices on form‐free substrates by cost …
enables the implementation of high‐performance devices on form‐free substrates by cost …
Engineering colloidal semiconductor nanocrystals for quantum information processing
Quantum information processing—which relies on spin defects or single-photon emission—
has shown quantum advantage in proof-of-principle experiments including microscopic …
has shown quantum advantage in proof-of-principle experiments including microscopic …
P- and N-type InAs nanocrystals with innately controlled semiconductor polarity
InAs semiconductor nanocrystals (NCs) exhibit intriguing electrical/optoelectronic properties
suitable for next-generation electronic devices. Although there is a need for both n-and p …
suitable for next-generation electronic devices. Although there is a need for both n-and p …
High-Affinity Ligand-Enhanced Passivation of Group III–V Colloidal Quantum Dots for Sensitive Near-Infrared Photodetection
Group III–V colloidal quantum dots (CQDs) are promising infrared-absorbing materials that
overcome the limitations of their regulated heavy-metal-containing counterparts, including …
overcome the limitations of their regulated heavy-metal-containing counterparts, including …
Evolution of low-dimensional material-based field-effect transistors
Field-effect transistors (FETs) have tremendous applications in the electronics industry due
to their outstanding features such as small size, easy fabrication, compatibility with …
to their outstanding features such as small size, easy fabrication, compatibility with …
Molecular‐Switch‐Embedded Solution‐Processed Semiconductors
Recent improvements in the performance of solution‐processed semiconductor materials
and optoelectronic devices have shifted research interest to the diversification/advancement …
and optoelectronic devices have shifted research interest to the diversification/advancement …
Near-infrared-active copper molybdenum sulfide nanocubes for phonon-mediated clearance of Alzheimer's β-amyloid aggregates
Ternary chalcogenide materials have attracted significant interest in recent years because of
their unique physicochemical and optoelectronic properties without relying on precious …
their unique physicochemical and optoelectronic properties without relying on precious …