This paper investigates short-channel effects (SCEs) in double-gate tunnel FETs (TFETs)
using an analytic model that includes depletion in the source. It is shown that the drain bias …

This brief models the effect of lightly doped drain on the I ds-V gs and I ds-V ds
characteristics of tunnel FETs. It is shown that an extended drain depletion region can …

In this paper, a new 2-D analytical model for the surface potential of a dual-metal-gate
double-gate tunnel field-effect transistor is presented. It takes into account the effects of the …

The effect of source doping on tunnel FET (TFET) currents is investigated analytically for the
case of an exponential barrier. Source depletion is coupled to the channel potential profile …

A compact model for generic heterojunction tunnel FETs (H-TFET) is developed to simulate
H-TFET formed by different source/body material systems. The model is based on the device …

In this brief, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked
heretojunctions from 2-D transition metal dichalcogenide materials are studied by atomistic …

This paper compares two different analytic solutions to the 2-D potential in double-gate
MOSFETs in subthreshold: Green's function method and scale length model. Both models …

This paper presents, the design architecture of the Heterojunction Surrounding Gate (HSG)
Tunnel Field Effect Transistor (TFET) employing Single Material (SM) gate and Dual Material …

A predictive tunnel FET compact model is proposed. Gaussian quadrature method is used to
overcome the challenge of integration. This provides the flexibility to use Wentzel–Kramers …

A triple-heterojunction (3HJ) design is employed to improve p-type InAs/GaSb
heterojunction (HJ) tunnel FETs. Atomistic quantum transport simulations show, that the …