Retarding‐field analyzer for measurements of ion energy distributions and secondary electron emission coefficients in low‐pressure radio frequency discharges

C Böhm, J Perrin - Review of scientific instruments, 1993 - pubs.aip.org
A four‐grid electrostatic energy analyzer for measurements of the ion velocity distribution
and the emission of secondary electrons on the electrodes of low‐pressure radio frequency …

Nitrogen in germanium

I Chambouleyron, AR Zanatta - Journal of applied physics, 1998 - pubs.aip.org
The known properties of nitrogen as an impurity in, and as an alloy element of, the
germanium network are reviewed in this article. Amorphous and crystalline germanium …

Spatially resolved optical emission and electrical properties of SiH4 RF discharges at 13.56 MHz in a symmetric parallel-plate configuration

C Bohm, J Perrin - Journal of Physics D: Applied Physics, 1991 - iopscience.iop.org
A symmetric capacitively coupled SiH 4 radio-frequency discharge at 13.56 MHz is analysed
by spatially resolved optical emission spectroscopy and by measurements of the RF voltage …

Real-time ellipsometry at high and low temperatures

D Mukherjee, P Petrik - ACS omega, 2023 - ACS Publications
Among the many available real-time characterization methods, ellipsometry stands out with
the combination of high sensitivity and high speed as well as nondestructive, spectroscopic …

Phase modulated ellipsometry from the ultraviolet to the infrared: in situ application to the growth of semiconductors

B Drévillon - Progress in crystal growth and characterization of …, 1993 - Elsevier
II. Phase Modulated Ellipsometry (PME) II. 1. Optical characterizations using polarized light
II. 2. Phase Modulated Ellipsometry: Optical formalism II. 2.1. First Order Approximation II …

Dependence of intrinsic stress in hydrogenated amorphous silicon on excitation frequency in a plasma‐enhanced chemical vapor deposition process

J Dutta, U Kroll, P Chabloz, A Shah… - Journal of applied …, 1992 - pubs.aip.org
The root mean square (rms) surface roughness was determined utilizing the technique
developed by Cunningham and Braundmeier. 17 A thin layer (< 1500 A> of silver was …

Optical response of microscopically rough surfaces

DE Aspnes - Physical Review B, 1990 - APS
The effect of microscopic roughness on the complex normal-incidence reflectance r̃ at an
interface between a transparent ambient and a microscopically rough substrate is treated …

A-Si: H deposition from SiH4 and Si2H6 RF-discharges: Pressure and temperature dependence of film growth in relation to α-γ discharge transition

J Perrin, PR i Cabarrocas, B Allain… - Japanese journal of …, 1988 - iopscience.iop.org
We present an interpretation of the pressure and temperature dependence of the growth
kinetics of hydrogenated amorphous silicon (a-Si: H) in SiH 4 and Si 2 H 6 rf-glow …

A real time ellipsometry study of the growth of amorphous silicon on transparent conducting oxides

S Kumar, B Drevillon - Journal of Applied Physics, 1989 - pubs.aip.org
In situ fast kinetic ellipsometry is used to investigate the early stage of the growth of
hydrogenated amorphous silicon (a-Si: H) on tin-doped indium oxide (ITO), tin oxide (TO) …

Ultrasmooth silver thin film electrodes with high polar liquid wettability for OLED microcavity application

C Cioarec, P Melpignano, N Gherardi, R Clergereaux… - Langmuir, 2011 - ACS Publications
For a lab-on-chip application, we fabricate a blue bottom emitting strong microcavity organic
light emitting diode (OLED), using very smooth and optically thin (25 nm) silver film as anode …