Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends
V Miikkulainen, M Leskelä, M Ritala… - Journal of Applied …, 2013 - pubs.aip.org
Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …
suitable for depositing uniform and conformal films on complex three-dimensional …
Development of hafnium based high-k materials—A review
The move to implement metal oxide based gate dielectrics in a metal-oxide-semiconductor
field effect transistor is considered one of the most dramatic advances in materials science …
field effect transistor is considered one of the most dramatic advances in materials science …
Applications of atomic layer deposition to nanofabrication and emerging nanodevices
H Kim, WJ Maeng - Thin solid films, 2009 - Elsevier
Recently, with scaling down of semiconductor devices, need for nanotechnology has
increased enormously. For nanoscale devices especially, each of the layers should be as …
increased enormously. For nanoscale devices especially, each of the layers should be as …
The coexistence of threshold and memory switching characteristics of ALD HfO 2 memristor synaptic arrays for energy-efficient neuromorphic computing
The development of bioinspired electronic devices that can mimic the biological synapses is
an essential step towards the development of efficient neuromorphic systems to simulate the …
an essential step towards the development of efficient neuromorphic systems to simulate the …
On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates
K Martens, CO Chui, G Brammertz… - … on Electron Devices, 2008 - ieeexplore.ieee.org
ldquoConventionalrdquo techniques and related capacitance-voltage characteristic
interpretation were established to evaluate interface trap density on Si substrates. We show …
interpretation were established to evaluate interface trap density on Si substrates. We show …
Germanium surface passivation and atomic layer deposition of high-k dielectrics—a tutorial review on Ge-based MOS capacitors
Due to its high intrinsic mobility, germanium (Ge) is a promising candidate as a channel
material (offering a mobility gain of approximately× 2 for electrons and× 4 for holes when …
material (offering a mobility gain of approximately× 2 for electrons and× 4 for holes when …
Effective electrical passivation of Ge (100) for high-k gate dielectric layers using germanium oxide
In search of a proper passivation for high-k Ge metal-oxide-semiconductor devices, the
authors have deposited high-k dielectric layers on Ge O 2, grown at 350–450 C in O 2. Zr …
authors have deposited high-k dielectric layers on Ge O 2, grown at 350–450 C in O 2. Zr …
Direct evidence of GeO volatilization from GeO2/Ge and impact of its suppression on GeO2/Ge metal–insulator–semiconductor characteristics
K Kita, S Suzuki, H Nomura, T Takahashi… - Japanese journal of …, 2008 - iopscience.iop.org
From the studies on the thermal desorption behaviors of GeO 2 film and its impact on the
electrical properties of GeO 2/Ge metal–insulator–semiconductor (MIS) capacitors, it was …
electrical properties of GeO 2/Ge metal–insulator–semiconductor (MIS) capacitors, it was …
Electrical properties of La2O3 and HfO2∕ La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices
Germanium metal-insulator-semiconductor capacitors with La 2 O 3 dielectrics deposited at
high temperature or subjected to post deposition annealing show good electrical …
high temperature or subjected to post deposition annealing show good electrical …
Atomic layer deposition of dielectrics on Ge and III–V materials for ultrahigh performance transistors
The prospect of utilizing alternative transistor channel materials for ultrahigh performance
transistors will require suitable gate dielectrics for surface-channel field-effect devices. With …
transistors will require suitable gate dielectrics for surface-channel field-effect devices. With …