A frequency-scalable, three-stage, transformer-coupled millimeter-wave power amplifier
(PA) is implemented in 130 nm SiGe-BiCMOS. Differential common-base gain stages extend …

This paper presents a V-band 1.2-V wideband power amplifier (PA) with a compact four-way
radial power combiner in a 90-nm CMOS process. A transformer-based radial power …

In this paper, a 60-GHz transformer (TF)-based voltage-type-combined single-stage stacked
field-effect transistor (FET) power amplifier (PA) is demonstrated using a 65-nm CMOS …

This paper presents a new approach to increase the output power and to enhance the drain
efficiency of Direct Digital RF Modulators (DDRM). Two differential four-phase DDRMs are …

This paper proposes the use of a high-power stacked output stage for a current-based in-
phase/quadrature (I/Q) direct digital to RF modulator (DDRM) in bulk CMOS. The main …

A millimeter-wave power amplifier fabricated in 90 nm bulk CMOS technology consists of 3
identical cascode stages and on-chip matching networks (inter-stage, input, and output) …

This article proposes a multi-mode wireless transmitter for full-duplex (FD) and half-duplex
(HD) operation based on a quadrature balanced switched-capacitor power amplifier (QB …

A millimeter-wave power amplifier in 90-nm bulk CMOS technology is described. Microstrip
transmission lines with ground sidewalls are used for signal distribution, matching and load …

This article reports a two-stage differential structure power amplifier based on a 130 nm
SiGe process operating at 77 GHz. By introducing a tunable capacitor for amplitude and …

This paper presents a four-way current-combining Ka-band power amplifier (PA) in 65-nm
CMOS technology. A symmetrical, transmission line based four-way current combiner …