High-temperature continuous-wave operation of 1310 nm InAs/GaAs quantum dot lasers
XB Su, FH Shao, HM Hao, LH Qing, SL Li… - Chinese …, 2023 - iopscience.iop.org
Here we report 1.3 μm electrical injection lasers based on InAs/GaAs quantum dots (QDs)
grown on a GaAs substrate, which can steadily work at 110 C without visible degradation …
grown on a GaAs substrate, which can steadily work at 110 C without visible degradation …
The effect of Woods–Saxon potential on envelope function, intersubband dispersion curves and group velocity of InAs/GaAs quantum dots with wetting layer
A Khaledi-Nasab, M Sabaeian, M Sahrai… - Physica E: Low …, 2014 - Elsevier
In this study, one band Schrödinger equation for InAs/GaAs quantum dots coupled to their
wetting layer was solved numerically by using a finite element method (FEM). We have …
wetting layer was solved numerically by using a finite element method (FEM). We have …
Molecular beam epitaxial growth of high quality InAs/GaAs quantum dots for 1.3-quantum dot lasers
HM Hao, XB Su, J Zhang, HQ Ni, ZC Niu - Chinese Physics B, 2019 - iopscience.iop.org
Systematic investigation of InAs quantum dot (QD) growth using molecular beam epitaxy has
been carried out, focusing mainly on the InAs growth rate and its effects on the quality of the …
been carried out, focusing mainly on the InAs growth rate and its effects on the quality of the …
[PDF][PDF] 准零维量子点激光器的发展瓶颈
李世国， 王新中， 周志文， 张卫丰 - 激光与光电子学进展, 2014 - researching.cn
摘要近年来半导体材料主要朝两个方向发展: 一方面是材料工程, 即通过不断探索扩展新的
半导体材料实现; 另一方面是能带工程, 即通过改变已知材料的维度进而实现能带的调节 …
半导体材料实现; 另一方面是能带工程, 即通过改变已知材料的维度进而实现能带的调节 …
[PDF][PDF] 1.16 µm InAs/GaAs Quantum Dot Laser grown by Metal Organic Chemical Vapor Deposition
H Liu, Q Wang, Z Li, J Chen, K Liu… - Acta Physica Polonica: A, 2018 - researchgate.net
Self-assembled InAs quantum dots (QDs) have been attracting many researchers since the
last century for their unique optical properties induced by the multiple dimensional size …
last century for their unique optical properties induced by the multiple dimensional size …
Spontaneous emission in the optically excited single-electron-tunneling device tuned by the tunneling
R Li, S Zhang, W Yan - Chinese Optics Letters, 2014 - opg.optica.org
The spontaneous emission spectrum in the optically excited single-electron-tunneling
device coupled to the side dot is analytically found to be determined by the 12 exciton …
device coupled to the side dot is analytically found to be determined by the 12 exciton …