This paper presents a design and analysis of a Hetero Dielectric Dual Material Gate
Underlap Spacer Tunnel Field Effect Transistor, aiming to enhance device performance and …

We have designed and simulated a 10-nanometer regime gate High Electron Mobility
Transistor (HEMT) with an undoped region (UR) under the gate with high k dielectric as …

This paper introduces and investigates a symmetrical structural design centered around a
Nanoscale Fin Field-Effect Transistor (Fin-FET). Employing advanced tcad simulation …

A new structure for SiGe Hetero-junction Bipolar transistor (HBT) is designed and simulated
using Silvaco simulator. The considered extra terminal gives the ability to control the …

In this paper, the impact of the undoped and recessed gate structure on the performance of
the silicon carbide metal semiconductor field effect transistor is presented. The importance of …

Two-dimensional analytical modelling of Dual Material Gate Tunnel Field Effect Transistor
with change in variation of gate oxide thickness (DMG-UOX-TFET) is proposed in this work …

This paper investigates the electrical behavior and performance of a Dual Metal Gate
Overlap on Drain Side Tunnel Field Effect Transistor with Spacer (DMG-ODS-TFET) in 10 …

Lebel-free sensors are capable for sensing low concentration of gas molecules. In this
article, the importance of Carbon Nanotube Field Effect Transistor (CNFET) is described for …

In this paper, we have investigated the impact of the un-doped and recessed gate structure
on the performance of the 6 H-SiC Metal Semiconductor Field Effect Transistor. The …

This study introduces a biosensor employing a dielectric-modulated dual material gate
tunnel field effect transistor (DM-DMG TFET) in 10 nanometer technology. To detect diverse …