Studies of the physics underlying carrier transport characteristics and band bending of
semiconductors are critical for developing new types of devices. In this work, we investigated …

So-called metal-induced silicon reconstructions (ie, metal films of monolayer or
submonolayer thickness epitaxially grown on single-crystal silicon substrates in ultra-high …

We discovered a set of C 60 nanostructures that appear to be constructed using a universal
building block made of four C 60 molecules on Si (111) or Ge (111) surfaces covered by an …

Scanning tunneling microscopy (STM) is used to study the basic laws of growth of ultrathin
epitaxial CoSi 2 (111) films with Co coverages up to 4 ML formed upon sequential …

We have used scanning tunneling microscopy (STM) and ab initio total-energy calculations
to characterize surface and interfacial structure of Co-Si (111) system. It has been found …

С помощью сканирующей туннельной микроскопии (СТМ) изучены основные
закономерности роста сверхтонких эпитаксиальных пленок CoSi2 (111) с покрытием …

We report scanning tunneling microscopy observations of solid-phase epitaxial growth of
ultra-thin CoSi 2 and CoSi films at heating temperatures in the range of 350–600° C using a …

The interaction of organic C 60 molecules with germanene grown on Al (1 1 1) is
investigated by experimental tools and calculations. By mean of scanning tunneling …

Abstract The Si (111) 13× 13− R 13.9°-Co surface reconstruction shows up in the scanning
tunneling microscopy images as an array of clusters. Two types of clusters coexist appearing …

C60 fullerene assemblies on surfaces have attracted considerable attention because of their
remarkable electronic properties. Now because of the competition between the molecules …