In situ imaging of the conducting filament in a silicon oxide resistive switch
The nature of the conducting filaments in many resistive switching systems has been
elusive. Through in situ transmission electron microscopy, we image the real-time formation …
elusive. Through in situ transmission electron microscopy, we image the real-time formation …
Understanding nanoscale plasticity by quantitative in situ conductive nanoindentation
J George, S Mannepalli… - Advanced Engineering …, 2021 - Wiley Online Library
Electronic materials such as semiconductors, piezo‐and ferroelectrics, and metal oxides are
primary constituents in sensing, actuation, nanoelectronics, memory, and energy systems …
primary constituents in sensing, actuation, nanoelectronics, memory, and energy systems …
Phase transformation and nanograin refinement of silicon by processing through high-pressure torsion
Si (100) wafers were subjected to severe plastic deformation under a pressure of 24 GPa
using high-pressure torsion (HPT). Si wafers were plastically deformed at room temperature …
using high-pressure torsion (HPT). Si wafers were plastically deformed at room temperature …
Controlling the thermoelectric power of silicon–germanium alloys in different crystalline phases by applying high pressure
NV Morozova, IV Korobeinikov, NV Abrosimov… - …, 2020 - pubs.rsc.org
Silicon, germanium and their alloys are classical semiconductors that play an important role
in fundamental sciences and are the basis for modern microelectronics, optoelectronics …
in fundamental sciences and are the basis for modern microelectronics, optoelectronics …
A hard oxide semiconductor with a direct and narrow bandgap and switchable p–n electrical conduction
SV Ovsyannikov, AE Karkin, NV Morozova… - Advanced …, 2014 - Wiley Online Library
DOI: 10.1002/adma. 201403304 systems with advanced properties or unusual electron
band structure features may, in turn, lead to emergent industrial applications. The …
band structure features may, in turn, lead to emergent industrial applications. The …
Fabrication of nanograined silicon by high-pressure torsion
This paper describes fabrication of Si nanograins through allotropic phase transformation by
concurrent application of high pressure and intense straining using high-pressure torsion …
concurrent application of high pressure and intense straining using high-pressure torsion …
Formation of metastable bc8 phase from crystalline Si0. 5Ge0. 5 by high-pressure torsion
Y Ikoma, T Yamasaki, T Shimizu, M Takaira… - Materials …, 2020 - Elsevier
Abstract Si 0.5 Ge 0.5 crystals were subjected to severe plastic deformation using high-
pressure torsion (HPT). A metastable body-centered-cubic phase having a bc8 structure was …
pressure torsion (HPT). A metastable body-centered-cubic phase having a bc8 structure was …
Thermal evolution of the metastable r8 and bc8 polymorphs of silicon
The kinetics of two metastable polymorphs of silicon under thermal annealing was
investigated. These phases with body-centered cubic bc8 and rhombohedral r8 structures …
investigated. These phases with body-centered cubic bc8 and rhombohedral r8 structures …
Tuning the electronic and vibrational properties of Sn 2 P 2 Se 6 and Pb 2 P 2 S 6 crystals and their metallization under high pressure
External stimuli enabling either a continuous tuning or an abrupt switching of the basic
properties of materials that are utilized in various industrial appliances could significantly …
properties of materials that are utilized in various industrial appliances could significantly …
Simultaneous measurement of mechanical and electrical contact resistances during nanoindentation of NiTi shape memory alloys
VV Shastry, U Ramamurty - Acta materialia, 2013 - Elsevier
The nanoindentation technique can be employed in shape memory alloys (SMAs) to discern
the transformation temperatures as well as to characterize their mechanical behavior. In this …
the transformation temperatures as well as to characterize their mechanical behavior. In this …