Increasing the reliability of wind turbines using condition monitoring of semiconductor devices: a review
The majority of electrical failures in wind turbines occur in the generator‐side semiconductor
devices. This is due to temperature swings affecting the layers of insulated‐gate bipolar …
devices. This is due to temperature swings affecting the layers of insulated‐gate bipolar …
In-service diagnostics for wire-bond lift-off and solder fatigue of power semiconductor packages
MA Eleffendi, CM Johnson - IEEE Transactions on Power …, 2017 - ieeexplore.ieee.org
Wire-bond lift-off and Solder fatigue are degradation mechanisms that dominate the lifetime
of power semiconductor packages. Although their lifetime is commonly estimated at the …
of power semiconductor packages. Although their lifetime is commonly estimated at the …
Dynamic modeling method of electro-thermo-mechanical degradation in IGBT modules
KB Pedersen, K Pedersen - IEEE Transactions on Power …, 2015 - ieeexplore.ieee.org
A degradation model investigating the electro-thermo-mechanical fatigue, experienced by
insulated gate bipolar transistors modules, is presented. To illustrate the concept, a specific …
insulated gate bipolar transistors modules, is presented. To illustrate the concept, a specific …
Dynamic electrothermal model of paralleled IGBT modules with unbalanced stray parameters
Y Tang, H Ma - IEEE Transactions on Power Electronics, 2016 - ieeexplore.ieee.org
Compared with single-module applications, unbalanced stray parameters come about
frequently in the process of installing paralleled IGBT modules, which could result in some …
frequently in the process of installing paralleled IGBT modules, which could result in some …
Prognostic system for power modules in converter systems using structure function
AM Aliyu, A Castellazzi - IEEE Transactions on Power …, 2017 - ieeexplore.ieee.org
This paper proposes an on-board methodology for monitoring the health of power converter
modules in drive systems, using vector control heating and structure function to check for …
modules in drive systems, using vector control heating and structure function to check for …
Effects of auxiliary-source connections in multichip power module
Auxiliary-source bond wires and connections are widely used in power modules with
paralleled mosfets or insulated gate bipolar transistor (IGBTs). This paper investigates the …
paralleled mosfets or insulated gate bipolar transistor (IGBTs). This paper investigates the …
An extended multilayer thermal model for multichip IGBT modules considering thermal aging
An accurate and real-time knowledge of temperatures in insulated-gate bipolar transistor
modules is crucial for reliability analysis and thermal management of power electronic …
modules is crucial for reliability analysis and thermal management of power electronic …
On-line junction temperature monitoring of switching devices with dynamic compact thermal models extracted with model order reduction
Residual lifetime estimation has gained a key point among the techniques that improve the
reliability and the efficiency of power converters. The main cause of failures are the junction …
reliability and the efficiency of power converters. The main cause of failures are the junction …
New analytical model for real-time junction temperature estimation of multichip power module used in a motor drive
A new analytical electro-thermal model of a multichip power module is described in this
paper. The proposed model is intended to be used during in-service conditions inside a …
paper. The proposed model is intended to be used during in-service conditions inside a …
Degradation assessment in IGBT modules using four-point probing approach
KB Pedersen, PK Kristensen, V Popok… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
Four-point probing of electrical parameters on various components of IGBT modules is
suggested as an approach for the estimation of degradation in stressed devices. By …
suggested as an approach for the estimation of degradation in stressed devices. By …