Hydrogenated amorphous silicon (a-Si: H) has been used for decades—doped and as
intrinsic absorber layers—in thin-film silicon solar cells. Whereas their effiency was improved …

The underlying physics of the application of low-temperature, low-pressure reactive plasmas
in various nanoassembly processes is described. From the viewpoint of the “cause and …

We report the microstructural evolution of the preferred orientation and electrical conductivity
of zinc oxide (ZnO) thin films prepared by ion beam sputtering. Elastic recoil detection …

We propose a design that increases significantly the absorption of a thin layer of absorbing
material such as amorphous silicon. This is achieved by patterning a one-dimensional …

The optical properties of δ-Bi 2 O 3 thin films were investigated using spectroscopic
ellipsometry and optical absorption spectrum. δ-Bi 2 O 3 thin films were grown on Si and …

High-k gate dielectric HfO2 thin films have been deposited on Si (100) by using plasma
oxidation of sputtered metallic Hf thin films. The optical and electrical properties in relation to …

Nanostructured silicon single junction thin film solar cells were deposited on commercial red
clay roof tiles with engobe surfaces and earthenware wall tiles with glazed surfaces, with a …

We theoretically explain and experimentally demonstrate light trapping in thin-film solar cells
through guided-mode resonance (GMR) effects. Resonant field enhancement and …

We present highly conductive and transparent p-type hydrogenated nanocrystalline silicon
oxide (p-type nc-SiO X: H) layers produced by Plasma Enhanced Chemical Vapor …

Hydrogenated nanocrystalline silicon oxide (nc-SiO x: H) is promising to replace
hydrogenated amorphous silicon (a-Si: H) as the window layer of silicon heterojunction …