Si, SiGe nanowire devices by top–down technology and their applications
N Singh, KD Buddharaju, SK Manhas… - … on Electron Devices, 2008 - ieeexplore.ieee.org
Nanowire (NW) devices, particularly the gate-all-around (GAA) CMOS architecture, have
emerged as the front-runner for pushing CMOS scaling beyond the roadmap. These devices …
emerged as the front-runner for pushing CMOS scaling beyond the roadmap. These devices …
Tailoring light–matter coupling in semiconductor and hybrid-plasmonic nanowires
Understanding interactions between light and matter is central to many fields, providing
invaluable insights into the nature of matter. In its own right, a greater understanding of light …
invaluable insights into the nature of matter. In its own right, a greater understanding of light …
A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors
AJ Cho, KC Park, JY Kwon - Nanoscale research letters, 2015 - Springer
For several years, graphene has been the focus of much attention due to its peculiar
characteristics, and it is now considered to be a representative 2-dimensional (2D) material …
characteristics, and it is now considered to be a representative 2-dimensional (2D) material …
CMOS logic device and circuit performance of Si gate all around nanowire MOSFET
In this paper, a detailed 3-D numerical analysis is carried out to study and evaluate CMOS
logic device and circuit performance of gate-all-around (GAA) Si nanowire (NW) field-effect …
logic device and circuit performance of gate-all-around (GAA) Si nanowire (NW) field-effect …
Gate-all-around nanowire MOSFET with catalytic metal gate for gas sensing applications
In this paper, gate-all-around (GAA) MOSFET with catalytic metal gate is proposed for
enhanced sensitivity of gas sensor. P-channel GAA MOSFET with palladium (Pd) metal gate …
enhanced sensitivity of gas sensor. P-channel GAA MOSFET with palladium (Pd) metal gate …
Numerical model of gate-all-around MOSFET with vacuum gate dielectric for biomolecule detection
In this letter, a dielectric-modulated GAA MOSFET with vacuum gate dielectric is proposed
for enhanced sensitivity for label-free detection of neutral and charged biomolecules. We …
for enhanced sensitivity for label-free detection of neutral and charged biomolecules. We …
Variability in Si nanowire MOSFETs due to the combined effect of interface roughness and random dopants: A fully three-dimensional NEGF simulation study
In this paper, we study the impact of surface roughness and its combination with random
discrete dopants on the current variability in nanometer-scale nanowire metal …
discrete dopants on the current variability in nanometer-scale nanowire metal …
Electronic Transport Modulation in Ultrastrained Silicon Nanowire Devices
MG Bartmann, S Glassner, M Sistani… - … Applied Materials & …, 2024 - ACS Publications
In this work, we explore the effect of ultrahigh tensile strain on electrical transport properties
of silicon. By integrating vapor–liquid–solid-grown nanowires into a micromechanical …
of silicon. By integrating vapor–liquid–solid-grown nanowires into a micromechanical …
Investigation of low-frequency noise in silicon nanowire MOSFETs in the subthreshold region
C Wei, YZ Xiong, X Zhou, N Singh… - IEEE electron device …, 2009 - ieeexplore.ieee.org
The low-frequency noise (LFN) in the subthreshold region of both n-and p-type gate-all-
around silicon nanowire transistors (SNWTs) is investigated. The measured drain-current …
around silicon nanowire transistors (SNWTs) is investigated. The measured drain-current …
Demonstration of Ge nanowire CMOS devices and circuits for ultimate scaling
In this paper, Ge nanowire (NW) CMOS devices and circuits are analyzed in detail. Various
experiment splits are studied, including device geometry parameters such as the channel …
experiment splits are studied, including device geometry parameters such as the channel …