InAs quantum dots grown on relaxed, metamorphic InGaAs buffers are an important
heterostructure for the realization of devices based on GaAs substrates. In these last 20 …

We present an overview of techniques used to pattern the epitaxial growth of quantum dots.
Subsequent growth, morphology, and optical characterization are also discussed. The …

We present a “bottom-up” approach for the lateral alignment of semiconductor quantum dots
(QDs) based on strain-driven self-organization. A buried stressor formed by partial oxidation …

Site‐controlled growth of quantum dots (QDs) for single photon emitters (SPEs) is achieved
applying a buried stressor approach. Theoretical and experimental analysis shows that site …

Quantum dots have attracted significant scientific interest owing to their optoelectronic
properties, which are distinct from their bulk counterparts. In order to fully utilize quantum …

We present the growth of single, site-controlled InAs quantum dots on GaAs templates using
UV-nanoimprint lithography and molecular beam epitaxy. A large quantum dot array with a …

A study of in-situ laser interference nano-patterning on InGaAs wetting layers was carried
out during InAs/GaAs (001) quantum dot molecular beam epitaxy growth. Periodic nano …

We combine nanoimprint lithography and molecular beam epitaxy for the site-controlled
growth of InAs quantum dot chains on GaAs (100) substrates. We study the influence of …

We present an experimental and theoretical analysis of the influence of a surface
nanopattern on the properties of embedded InAs/GaAs quantum dots (QD). In particular, we …

Pyramidal quantum dots (QDs) grown in inverted recesses have demonstrated over the
years an extraordinary uniformity, high spectral purity and strong design versatility. We …