[HTML][HTML] Forward and reverse current transport mechanisms in tungsten carbide Schottky contacts on AlGaN/GaN heterostructures
In this paper, the forward and reverse current transport mechanisms in as-deposited and
400 C annealed tungsten carbide (WC) Schottky contacts on AlGaN/GaN heterostructures …
400 C annealed tungsten carbide (WC) Schottky contacts on AlGaN/GaN heterostructures …
Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN
The gate leakage current mechanism of AlGaN/GaN Schottky barrier diodes (SBDs) and
high-electron-mobility transistors (HEMTs) with sputtered TiN is systematically investigated …
high-electron-mobility transistors (HEMTs) with sputtered TiN is systematically investigated …
AlGaN/GaN high electron mobility transistors on Si with sputtered TiN gate
AlGaN/GaN high electron mobility transistors (HEMTs) on Si were fabricated and studied
using sputtered TiN Schottky gate. The sputtered TiN on AlGaN/GaN HEMTs exhibit an …
using sputtered TiN Schottky gate. The sputtered TiN on AlGaN/GaN HEMTs exhibit an …
Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures
Tungsten carbide (WC) contacts have been investigated as an original gold-free Schottky
metallization for AlGaN/GaN heterostructures. The evolution of the electrical and structural …
metallization for AlGaN/GaN heterostructures. The evolution of the electrical and structural …
AlGaN/GaN HEMT fabrication and challenges
G Dutta, S Kanaga, N DasGupta… - Handbook for III-V High …, 2019 - taylorfrancis.com
Due to their attractive properties, group-III Nitrides (AlN, GaN and InN) and their
ternary/quaternary compound based materials are increasingly getting a lot of an attention …
ternary/quaternary compound based materials are increasingly getting a lot of an attention …
Planar and non-gold metal stacks processes and conduction mechanisms for AlGaN/GaN high-electron-mobility transistors on silicon
Y Li - 2017 - dr.ntu.edu.sg
AlGaN/GaN high-electron-mobility transistors (HEMTs) have demonstrated great potentials
in high voltage and high frequency applications due to the advantage in their intrinsic …
in high voltage and high frequency applications due to the advantage in their intrinsic …
[图书][B] Electrical noise and charge transport studies of AlGaN/GaN high electron mobility transistors
W Xu - 2014 - search.proquest.com
Abstract AlGaN/GaN HEMTs have shown great performance in high frequency and high
power applications. However, since the fabrication process of GaN devices is developed in …
power applications. However, since the fabrication process of GaN devices is developed in …