Design of stable active matrix organic light-emitting diode (AMOLED) displays comes with
significant challenges that stem from the electrical property of the backplane materials, line …

Amorphous oxide semiconductor thin film transistors and sensors constitute fundamental
building blocks for a new generation of applications ranging from interactive displays and …

Solution‐processed indium‐gallium‐zinc oxide (IGZO) thin film transistors (TFTs) have
become well known in recent decades for their promising commercial potential. However …

A new low-temperature polysilicon thin-film-transistor pixel circuit for 3-D active-matrix
organic light-emitting diode (OLED) display and its driving scheme that is based on …

This paper proposed a new approach to compensate IR‐Drop on AMOLED panel for CLM
(channel length modulation). IR drop will cause the luminance non‐uniformity problem …

This application is a nonprovisional of, and claims the benefit of the filing date of US
Provisional Patent Applica tion No. 61/316,755, filed Mar. 23, 2009, entitled “CMOS IC for …

This paper presents a simple pixel structure that uses the voltage-programmed method to
compensate for the electrical characteristic variations in low-temperature polycrystalline …

Providing a reliable and consolidated treatment of the principles behind large-area
electronics, this book provides a comprehensive review of the design challenges associated …

In addition to the gate electrode at the bottom, a dual-gate amorphous InGaZnO4 thin-film
transistor (TFT) has a secondary gate electrode on the top. The threshold voltage (Vth) of the …

This work presents a new active-matrix organic light-emitting diode (AMOLED) pixel circuit
with a novel driving scheme that is based on low-temperature polycrystalline-silicon thin film …