Enhancement of Double Gate Tunnel Field Effect Transistor Structures with Different Variable Parameters
NS Tallapaneni, M Venkatesan - 2023 7th International …, 2023 - ieeexplore.ieee.org
TFET is enhanced with the modified structure by the double gate used above the channel
transistor with silicon and germanium forming hetero junction and used dielectric materials …
transistor with silicon and germanium forming hetero junction and used dielectric materials …
Design and Drain Current Characteristics of L-Shaped Dielectric TFET with work function Engineering
NS Tallapaneni, M Venkatesan - 2023 Fifth International …, 2023 - ieeexplore.ieee.org
The Tunnel Field Effect Transistor (TFET) is modified internally with a novel L-shaped with
two different dielectric materials in 5nm technology using the TCAD tool. The proposed …
two different dielectric materials in 5nm technology using the TCAD tool. The proposed …
[引用][C] Design and Investigation of Junction-less TFET (JL-TFET) for the Realization of Logic Gates
The demand for energy-efficient electronics has propelled the exploration of alternative
transistor technologies, among which Tunnel Field-Effect Transistors (TFETs) have garnered …
transistor technologies, among which Tunnel Field-Effect Transistors (TFETs) have garnered …