Dielectrics for two-dimensional transition-metal dichalcogenide applications
Despite over a decade of intense research efforts, the full potential of two-dimensional
transition-metal dichalcogenides continues to be limited by major challenges. The lack of …
transition-metal dichalcogenides continues to be limited by major challenges. The lack of …
Band alignment at interfaces of two-dimensional materials: internal photoemission analysis
VV Afanas'ev, G Delie, M Houssa… - Journal of Physics …, 2020 - iopscience.iop.org
The article overviews experimental results obtained by applying internal photoemission
(IPE) spectroscopy methods to characterize electron states in single-or few-monolayer thick …
(IPE) spectroscopy methods to characterize electron states in single-or few-monolayer thick …
Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity
D Chiappe, J Ludwig, A Leonhardt, S El Kazzi… - …, 2018 - iopscience.iop.org
The rapid cadence of MOSFET scaling is stimulating the development of new technologies
and accelerating the introduction of new semiconducting materials as silicon alternative. In …
and accelerating the introduction of new semiconducting materials as silicon alternative. In …
High‐Performance Sensing Behavior Using Electronic Ink of 2D SnSe2 Nanosheets
Most of the recent research work on layered chalcogenides is understandably focused on
single atomic layers. However, it is uncertain if the single layer units are most ideal …
single atomic layers. However, it is uncertain if the single layer units are most ideal …
High mobility ReSe2 field effect transistors: Schottky-barrier-height-dependent photoresponsivity and broadband light detection with Co decoration
Abstract 2D transition metal dichalcogenides are promising in various electronics and
optoelectronics applications and have gained popularity owing to their carrier transport and …
optoelectronics applications and have gained popularity owing to their carrier transport and …
MoS2 Functionalization with a Sub-nm Thin SiO2 Layer for Atomic Layer Deposition of High-κ Dielectrics
H Zhang, G Arutchelvan, J Meersschaut… - Chemistry of …, 2017 - ACS Publications
Several applications of two-dimensional (2D) semiconducting transition metal
dichalcogenides (TMDs) in nanoelectronic devices require the deposition of ultrathin …
dichalcogenides (TMDs) in nanoelectronic devices require the deposition of ultrathin …
Analysis of admittance measurements of MOS capacitors on CVD grown bilayer MoS2
In this study we present results on the AC admittance response of bilayer MoS 2 films grown
using chemical vapor deposition. A new MOS capacitor design for ultra-thin body 2D …
using chemical vapor deposition. A new MOS capacitor design for ultra-thin body 2D …
Impact of MoS2 layer transfer on electrostatics of MoS2/SiO2 interface
VV Afanas'ev, D Chiappe, M Perucchini… - …, 2018 - iopscience.iop.org
Using internal photoemission of electrons from few-monolayer thin MoS 2 films into SiO 2 we
found that the MoS 2 layer transfer processing perturbs electroneutrality of the interface …
found that the MoS 2 layer transfer processing perturbs electroneutrality of the interface …
Analysis of transferred MoS2 layers grown by MOCVD: evidence of Mo vacancy related defect formation
B Schoenaers, A Leonhardt, AN Mehta… - ECS Journal of Solid …, 2020 - iopscience.iop.org
A low-temperature multi-frequency electron spin resonance (ESR) study has been carried
out on 1, 3.5, and 6 layer thick MoS 2 films, grown by metal organic vapor deposition …
out on 1, 3.5, and 6 layer thick MoS 2 films, grown by metal organic vapor deposition …
Control of work function of MoS2 with ferroelectric polarization in honeycomb-like heterostructure
MoS 2, one of the transition metal dichalcogenides (TMDs), has been utilized in
heterostructures with functional oxide materials such as ferroelectrics. Here, we report MoS …
heterostructures with functional oxide materials such as ferroelectrics. Here, we report MoS …