Electrostatic discharge (ESD) is an event that sends current through an integrated circuit
(IC). This paper reviews the impact of ESD on the IC industry and details the four stages of …

Reliability of thin dielectric films such as silicon dioxide grown on single crystalline silicon is
of great importance for integrated circuits of present and future technologies. For the …

Today, micro-electronic circuits are undeniably and ubiquitously present in our society.
Transportation vehicles such as cars, trains, buses, and airplanes make abundant use of …

In this paper, we present a model for silicon dioxide breakdown characterization, valid for a
thickness range between 25/spl Aring/and 130/spl Aring/, which provides a method for …

The wide-bandgap nature of silicon carbide (SiC) makes it an excellent candidate for
applications where high temperature is required. The metal-oxide-semiconductor (MOS) …

Advancements in scaling gate insulators for MOS transistors permit low-voltage, silicon-
oxide-nitride-silicon (SONOS) nonvolatile semiconductor memories (NVSMs) for a wide …

A technique of predicting the lifetime of an oxide to different voltages, different oxide areas,
and different temperatures is presented. Using the defect density model in which defects are …

This book raises the level of understanding of thermal design criteria. It provides the design
team with sufficient knowledge to help them evaluate device architecture trade-offs and the …

Leakage currents and dielectric breakdown were studied in MIS capacitors of metal-
aluminum oxide-silicon. The aluminum oxide was produced by thermally oxidizing AlN at …

Despite extensive experimental and theoretical studies, the atomistic mechanisms
responsible for dielectric breakdown (BD) in amorphous (a)-SiO2 are still poorly understood …