Electrostatic discharge in semiconductor devices: an overview
JE Vinson, JJ Liou - Proceedings of the IEEE, 1998 - ieeexplore.ieee.org
Electrostatic discharge (ESD) is an event that sends current through an integrated circuit
(IC). This paper reviews the impact of ESD on the IC industry and details the four stages of …
(IC). This paper reviews the impact of ESD on the IC industry and details the four stages of …
Dielectric reliability measurement methods: a review
A Martin, P O'Sullivan, A Mathewson - Microelectronics Reliability, 1998 - Elsevier
Reliability of thin dielectric films such as silicon dioxide grown on single crystalline silicon is
of great importance for integrated circuits of present and future technologies. For the …
of great importance for integrated circuits of present and future technologies. For the …
Hole injection SiO/sub 2/breakdown model for very low voltage lifetime extrapolation
KF Schuegraf, C Hu - IEEE transactions on electron devices, 1994 - ieeexplore.ieee.org
In this paper, we present a model for silicon dioxide breakdown characterization, valid for a
thickness range between 25/spl Aring/and 130/spl Aring/, which provides a method for …
thickness range between 25/spl Aring/and 130/spl Aring/, which provides a method for …
Reliability issues of SiC MOSFETs: A technology for high-temperature environments
CY Liangchun, GT Dunne, KS Matocha… - … on Device and …, 2010 - ieeexplore.ieee.org
The wide-bandgap nature of silicon carbide (SiC) makes it an excellent candidate for
applications where high temperature is required. The metal-oxide-semiconductor (MOS) …
applications where high temperature is required. The metal-oxide-semiconductor (MOS) …
Modeling and characterization of gate oxide reliability
JC Lee, C Ih-Chin, H Chenming - IEEE Transactions on …, 1988 - ieeexplore.ieee.org
A technique of predicting the lifetime of an oxide to different voltages, different oxide areas,
and different temperatures is presented. Using the defect density model in which defects are …
and different temperatures is presented. Using the defect density model in which defects are …
[图书][B] Influence of temperature on microelectronics and system reliability: A physics of failure approach
This book raises the level of understanding of thermal design criteria. It provides the design
team with sufficient knowledge to help them evaluate device architecture trade-offs and the …
team with sufficient knowledge to help them evaluate device architecture trade-offs and the …
Electrical conduction and dielectric breakdown in aluminum oxide insulators on silicon
J Kolodzey, EA Chowdhury, TN Adam… - … on Electron Devices, 2000 - ieeexplore.ieee.org
Leakage currents and dielectric breakdown were studied in MIS capacitors of metal-
aluminum oxide-silicon. The aluminum oxide was produced by thermally oxidizing AlN at …
aluminum oxide-silicon. The aluminum oxide was produced by thermally oxidizing AlN at …
A microscopic mechanism of dielectric breakdown in SiO2 films: An insight from multi-scale modeling
Despite extensive experimental and theoretical studies, the atomistic mechanisms
responsible for dielectric breakdown (BD) in amorphous (a)-SiO2 are still poorly understood …
responsible for dielectric breakdown (BD) in amorphous (a)-SiO2 are still poorly understood …