The revolutions made in the CMOS technology are brought up by, continuous downscaling
in order to obtain higher density, better performance and low power consumption, causing …

We systemically investigated the impact of variation in temperature on electrical parameters
for a dual material gate (DMG) FinFET. We have highlighted the DC performance such as …

A comparative analysis of the trigate fin-shaped field-effect transistor (FinFET) and quantum
FinFET (QFinFET) is carried out by using density gradient quantization models in the …

In this paper, the strategic review of different materials that are used in FinFET structure is
studied. This is achieved by using carefully designed source/drain spacers and doped …

This paper presents a comparative 3D simulation study of Quality factor among Gate
Underlap and Overlap techniques in both Si and Ge Dual Material Gate (DMG) FinFETs …

In this work, a systematically analysis of the Negative Capacitance (NC) Quad-FinFET
structure is carried out where we determine the optimal FE layer thickness that enables …

It is well established that increase in number of fins improves the RF/Analog performances of
FinFET. In this paper, the effect of work function (ɸ M) of metal gate on transfer …

abstract Low power and high speed devices are the future transistor technology. The low
power and higher the wield of Strained Channels with functionality booster becomes more …

This paper presented findings on statistical impact of mole fraction (x) on threshold voltage,
on current, and off current in high-k/metal gate SiGe channel Tunnel FET (TFET) due to work …

The sub-threshold surface potential and drain current analytical models for deep submicron
based double metal gate (DMG) metal oxide semiconductor field effect transistor (MOSFET) …