Abstract 1D III–V semiconductor nanowires (NWs) attract significant interests in fundamental
physics and promising applications of high‐performance room‐temperature infrared (IR) …

III–V-based nanowires usually exhibit random mixtures of wurtzite (WZ) and zinc blende (ZB)
crystal structure, and pure crystal phase wires represent the exception rather than the rule. In …

Using transient terahertz photoconductivity measurements, we have made noncontact, room
temperature measurements of the ultrafast charge carrier dynamics in InP nanowires. InP …

Photoelectrochemical (PEC) water splitting into hydrogen and oxygen is a promising
strategy to absorb solar energy and directly convert it into a dense storage medium in the …

We report on the optical trapping characteristics of InP nanowires with dimensions of 30 (±6)
nm in diameter and 2–15 μm in length. We describe a method for calibrating the absolute …

Crystal phase quantum dots (QDs) are formed during the axial growth of III–V semiconductor
nanowires (NWs) by stacking different crystal phases of the same material. In III–V …

For the first time, we report a complete control of crystal structure in InAs1–x Sb x NWs by
tuning the antimony (Sb) composition. This claim is substantiated by high-resolution …

Here we demonstrate the existence of two distinct regimes for tuning crystal structure in
GaAs nanowires from zinc blende to wurtzite using a single process parameter: V/III-ratio, or …

High resolution x-ray diffraction is used to study the structural properties of the wurtzite
polytype of InP nanowires. Wurtzite InP nanowires are grown by metal–organic vapor phase …

Quantum dot (QD) emitters on silicon platforms have been considered as a fascinating
approach to building next-generation quantum light sources toward unbreakable secure …