GaAsBi: from molecular beam epitaxy growth to devices
RD Richards, NJ Bailey, Y Liu… - … status solidi (b), 2022 - Wiley Online Library
GaAsBi has been researched as a candidate material for optoelectronic devices for around
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …
Strained-layer quantum well materials grown by MOCVD for diode laser application
Strained-layer quantum wells have revolutionized the performance of near-infrared diode
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …
lasers. Two primary factors leading to the prevalence of such materials are; 1) the ability for …
Deep levels and carrier capture kinetics in n-GaAsBi alloys investigated by deep level transient spectroscopy
Abstract Dilute bismides (% Bi∼ 1%–3%) are excellent candidates for the fabrication of
optoelectronic devices, thanks to the strong reduction in the bandgap with increasing …
optoelectronic devices, thanks to the strong reduction in the bandgap with increasing …
MOVPE growth and characterization of GaAs/GaAsBi/GaAs pin structure
In this work, we report on the epitaxial growth and characterization of the
GaAs/GaAsBi/GaAs pin structure. The samples were grown on a GaAs (001) substrate using …
GaAs/GaAsBi/GaAs pin structure. The samples were grown on a GaAs (001) substrate using …
The impact of strained layers on current and emerging semiconductor laser systems
SJ Sweeney, TD Eales, AR Adams - Journal of Applied Physics, 2019 - pubs.aip.org
In this paper, we discuss how the deliberate and controlled introduction of strain can be
used to improve the performance of semiconductor lasers. We show how strain-induced …
used to improve the performance of semiconductor lasers. We show how strain-induced …
Two-dimensional particle-in-cell simulation parallelized with graphics processing units for the investigation of plasma kinetics in a dual-frequency capacitively coupled …
JH Shin, H Kim, HJ Lee - Reviews of Modern Plasma Physics, 2022 - Springer
The kinetic aspects of electron heating and ion transport are discussed using a high-
performance two-dimensional particle-in-cell simulation parallelized with a graphics …
performance two-dimensional particle-in-cell simulation parallelized with a graphics …
Continuous wave operation of GaAsBi microdisk lasers at room temperature with large wavelengths ranging from 1.27 to 1.41 μm
Submicron-meter size GaAsBi disk resonators were fabricated with the GaAsBi/GaAs single-
quantum-well (QW)-structure grown by molecular beam epitaxy. The GaAsBi/GaAs QW …
quantum-well (QW)-structure grown by molecular beam epitaxy. The GaAsBi/GaAs QW …
Modified band alignment method to obtain hybrid functional accuracy from standard DFT: Application to defects in highly mismatched III-V: Bi alloys
This paper provides an accurate theoretical defect energy database for pure and Bi-
containing III-V (III-V: Bi) materials and investigates efficient methods for high-throughput …
containing III-V (III-V: Bi) materials and investigates efficient methods for high-throughput …
Room‐temperature laser operation of a (Ga, In) As/Ga (As, Bi)/(Ga, In) As W‐type laser diode
T Hepp, J Lehr, R Günkel, O Maßmeyer… - Electronics …, 2022 - Wiley Online Library
The ongoing pursuit for laser device emitting in the near‐infrared spectral region on GaAs
substrates has led to various material systems and device concepts. Alloys containing dilute …
substrates has led to various material systems and device concepts. Alloys containing dilute …
[HTML][HTML] Single junction solar cell employing strain compensated GaAs0. 965Bi0. 035/GaAs0. 75P0. 25 multiple quantum wells grown by metal organic vapor phase …
Single junction solar cells employing 30-period and 50-period GaAs 0.965 Bi 0.035/GaAs
0.75 P 0.25 (Eg∼ 1.2 eV) multiple quantum wells (MQWs) as base regions were grown by …
0.75 P 0.25 (Eg∼ 1.2 eV) multiple quantum wells (MQWs) as base regions were grown by …