Imperfection-enabled memristive switching in van der Waals materials

M Li, H Liu, R Zhao, FS Yang, M Chen, Y Zhuo… - Nature …, 2023 - nature.com
Memristive devices can offer dynamic behaviour, analogue programmability, and scaling
and integration capabilities. As a result, they are of potential use in the development of …

Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (MLC) storage, modeling, and applications

F Zahoor, TZ Azni Zulkifli, FA Khanday - Nanoscale research letters, 2020 - Springer
In this manuscript, recent progress in the area of resistive random access memory (RRAM)
technology which is considered one of the most standout emerging memory technologies …

[HTML][HTML] Resistance random access memory

TC Chang, KC Chang, TM Tsai, TJ Chu, SM Sze - Materials Today, 2016 - Elsevier
Non-volatile memory (NVM) will play a decisive role in the development of the next-
generation of electronic products. Therefore, the development of next-generation NVM is …

State of the art of metal oxide memristor devices

B Mohammad, MA Jaoude, V Kumar… - Nanotechnology …, 2016 - degruyter.com
Memristors are one of the emerging technologies that can potentially replace state-of-the-art
integrated electronic devices for advanced computing and digital and analog circuit …

Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO2 Memristor

H Jiang, L Han, P Lin, Z Wang, MH Jang, Q Wu… - Scientific reports, 2016 - nature.com
Memristive devices are promising candidates for the next generation non-volatile memory
and neuromorphic computing. It has been widely accepted that the motion of oxygen anions …

Impact of Temperature on the Resistive Switching Behavior of Embedded -Based RRAM Devices

C Walczyk, D Walczyk, T Schroeder… - IEEE transactions on …, 2011 - ieeexplore.ieee.org
Back-end-of-line integrated 1*1\mum^2\hboxTiN/HfO_2/\breakTi/TiN MIM memory devices in
a 0.25-μm complementary metal–oxide–semiconductor technology were built to investigate …

Analog nanoscale electro-optical synapses for neuromorphic computing applications

K Portner, M Schmuck, P Lehmann, C Weilenmann… - ACS …, 2021 - ACS Publications
The typically nonlinear and asymmetric response of synaptic memristors to positive and
negative electrical pulses makes the realization of accurate deep neural networks very …

High-temperature operation of gallium oxide memristors up to 600 K

K Sato, Y Hayashi, N Masaoka, T Tohei, A Sakai - Scientific Reports, 2023 - nature.com
Memristors have attracted much attention for application in neuromorphic devices and brain-
inspired computing hardware. Their performance at high temperatures is required to be …

To be or not to be–review of electrical bistability mechanisms in polymer memory devices

F Paul, S Paul - Small, 2022 - Wiley Online Library
Organic memory devices are a rapidly evolving field with much improvement in device
performance, fabrication, and application. But the reports have been disparate in terms of …

Multilayer-Based Forming-Free RRAM Devices With Excellent Uniformity

Z Fang, HY Yu, X Li, N Singh, GQ Lo… - IEEE Electron Device …, 2011 - ieeexplore.ieee.org
In this letter, a significantly improved uniformity of device parameters (for cycle-to-cycle
uniformity within one device and device-to-device uniformity), such as set voltage, reset …