The rise of AI optoelectronic sensors: From nanomaterial synthesis, device design to practical application

S Zhang, S Wei, Z Liu, T Li, C Li, XL Huang… - Materials Today …, 2022 - Elsevier
We have seen the significant influence of the information revolution brought about by
optoelectronic sensing technologies on human civilization over the last few decades …

A Critical Review of Techniques for the Experimental Extraction of the Thermal Resistance of Bipolar Transistors from DC Measurements—Part I: Thermometer-Based …

V d'Alessandro, AP Catalano, C Scognamillo, M Müller… - Electronics, 2023 - mdpi.com
This paper presents a critical and detailed overview of experimental techniques for the
extraction of the thermal resistance of bipolar transistors from simple DC current/voltage …

Numerical simulation and analytical modeling of the thermal behavior of single-and double-sided cooled power modules

AP Catalano, C Scognamillo… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
This article presents the detailed thermal analysis and modeling of multichip power modules
(PMs). For the first time, a fair thermal comparison between the widespread single-sided …

[HTML][HTML] Compact modeling of a 3.3 kv sic mosfet power module for detailed circuit-level electrothermal simulations including parasitics

C Scognamillo, AP Catalano, M Riccio, V d'Alessandro… - Energies, 2021 - mdpi.com
In this paper, an advanced electrothermal simulation strategy is applied to a 3.3 kV silicon
carbide MOSFET power module. The approach is based on a full circuital representation of …

Analysis of electrothermal effects in devices and arrays in InGaP/GaAs HBT technology

V d'Alessandro, AP Catalano, C Scognamillo… - Electronics, 2021 - mdpi.com
In this paper, the dc electrothermal behavior of InGaP/GaAs HBT test devices and arrays for
power amplifier output stages is extensively analyzed through an efficient simulation …

Modeling bias dependence of self-heating in GaN HEMTs using two heat sources

X Chen, S Boumaiza, L Wei - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
This article proposes a new approach for modeling self-heating in gallium nitride (GaN) high-
electron-mobility transistors (HEMTs). The proposed approach utilizes two heat sources to …

Circuit-based electrothermal simulation of multicellular SiC power MOSFETs using FANTASTIC

V d'Alessandro, L Codecasa, AP Catalano… - Energies, 2020 - mdpi.com
This paper discusses the benefits of an advanced highly-efficient approach to static and
dynamic electrothermal simulations of multicellular silicon carbide (SiC) power MOSFETs …

Experimental determination, modeling, and simulation of nonlinear thermal effects in bipolar transistors under static conditions: A critical review and update

V d'Alessandro, AP Catalano, C Scognamillo, M Müller… - Energies, 2022 - mdpi.com
This paper presents a comprehensive overview of nonlinear thermal effects in bipolar
transistors under static conditions. The influence of these effects on the thermal resistance is …

Combined experimental-FEM investigation of electrical ruggedness in double-sided cooled power modules

C Scognamillo, AP Catalano, P Lasserre… - Microelectronics …, 2020 - Elsevier
In this paper, an experimental and numerical study of the electrical ruggedness in double-
sided cooled power modules is presented. In particular, the analysis focuses on the role of …

Influence of selected factors on thermal parameters of the components of forced cooling systems of electronic devices

K Posobkiewicz, K Górecki - Electronics, 2021 - mdpi.com
The paper presents some investigation results on the properties of forced cooling systems
dedicated to electronic devices. Different structures of such systems, including Peltier …