Strain-dependent magnetic ordering switching in 2D AFM ternary V-based chalcogenide monolayers
The lack of macroscopic magnetic moments makes antiferromagnetic materials promising
candidates for high-speed spintronic devices. The 2D ternary V-based chalcogenides …
candidates for high-speed spintronic devices. The 2D ternary V-based chalcogenides …
TSV technology and high-energy heavy ions radiation impact review
W Tian, T Ma, X Liu - Electronics, 2018 - mdpi.com
Three-dimensional integrated circuits (3D IC) based on TSV (Through Silicon Via)
technology is the latest packaging technology with the smallest size and quality. As a result …
technology is the latest packaging technology with the smallest size and quality. As a result …
Synergistic effect of ionization and displacement damage in NPN transistors caused by protons with various energies
Based on 2N2222 NPN bipolar junction transistors (BJTs), synergistic effect between
ionization and displacement defects induced by 3 MeV, 5 MeV and 10 MeV protons were …
ionization and displacement defects induced by 3 MeV, 5 MeV and 10 MeV protons were …
Synergistic effects of NPN transistors caused by combined proton irradiations with different energies
There are a large number of protons with different energies from the dozens of keV to
hundreds of MeV in space environment, which simultaneously act on the bipolar junction …
hundreds of MeV in space environment, which simultaneously act on the bipolar junction …
The effect of ionization and displacement damage on minority carrier lifetime
Based on 1 MeV electrons and 40 MeV Si ion irradiations, the contribution of ionization and
displacement damage to the decrease in the minority carrier lifetime of gate controlled …
displacement damage to the decrease in the minority carrier lifetime of gate controlled …
Threshold displacement energy of amorphous SiO2: A molecular dynamics study
Amorphous SiO 2 is a vital insulation or isolation material in modern silicon-based devices
and chips, which is exposed to irradiations of energetic particles when working in space …
and chips, which is exposed to irradiations of energetic particles when working in space …
The mechanism of the irradiation synergistic effect of silicon bipolar junction transistors explained by multiscale simulations of Monte Carlo and excited-state first …
Z Yang, Y Liu, N An, X Chen - The Journal of Chemical Physics, 2023 - pubs.aip.org
Neutron and γ-ray irradiation damages to transistors are found to be non-additive, and this is
denoted as the irradiation synergistic effect (ISE). Its mechanism is not well-understood. The …
denoted as the irradiation synergistic effect (ISE). Its mechanism is not well-understood. The …
Defect dynamic model of the synergistic effect in neutron-and γ-ray-irradiated silicon NPN transistors
A defect dynamic model is proposed for the positive synergistic effect of neutron-and γ-ray-
irradiated silicon NPN transistors. The model considers a γ-ray-induced transformation and …
irradiated silicon NPN transistors. The model considers a γ-ray-induced transformation and …
Mechanism of synergistic effects of neutron-and gamma-ray-radiated PNP bipolar transistors
The synergistic effects of neutron-and gamma-ray-radiated PNP transistors are
systematically investigated as functions of the neutron fluence, gamma-ray dose, and dose …
systematically investigated as functions of the neutron fluence, gamma-ray dose, and dose …
Origin of irradiation synergistic effects in silicon bipolar transistors
The practical damage of silicon bipolar devices subjected to mixed ionization and
displacement irradiations is usually evaluated by the sum of separated ionization and …
displacement irradiations is usually evaluated by the sum of separated ionization and …