We report the mapping of polarization-induced internal electric fields in AlN/GaN nanowire
heterostructures at unit cell resolution as a key for the correlation of optical and structural …

With the rapid improvement of photonics, the demand for high-performance distributed
Bragg reflectors (DBRs) is increasing. In this study, high-performance DBRs stacked by …

III-Nitride semiconductors are the materials of choice for state-of-the-art opto-electronic and
high-power electronic applications. Through the incorporation of magnetic ions, like …

Resonance Raman analysis is performed in order to gain insight into the nature of impurity-
induced Raman features in GaN:(Mn, Mg) hosting Mn-Mg k cation complexes and …

By combining experimental photoluminescence excitation spectroscopy and calculations
based on density functional theory and many-body Green's functions, the most efficient …

Micro-nano grooves incorporated into a suspended GaN sheet is proposed for active and
passive monolithic integration of silicon based InGaN/GaN blue LEDs. Rigorous finite …

We study 1 isolated or 2 neighboring Mn impurities, as well as 1 Mn and 1, 2, or 3 Mg ions
as substitutional impurities for Ga in zinc-blende and wurtzite supercells of GaN by means of …

Методами рентгеноструктурного анализа и спектроскопии фотолюминесценции
проведены исследования выращенных методом молекулярно-пучковой эпитаксии …

X-ray structural analysis and photoluminescence spectroscopy techniques were used to
study heterostructures based on InGaAs/InAlGaAs superlattice for active regions of 1300 nm …

The family of III-nitrides represents the building block of a variety of state-of-the-art (opto-)
electronic devices, and the interest in this material system, from both industry and academia …