A review of molecular-beam epitaxy of wide bandgap complex oxide semiconductors
W Nunn, TK Truttmann, B Jalan - Journal of materials research, 2021 - Springer
Much progress has been made in the area of wide bandgap semiconductors for applications
in electronics and optoelectronics such as displays, power electronics, and solar cells. New …
in electronics and optoelectronics such as displays, power electronics, and solar cells. New …
Correlated metals as transparent conductors
The fundamental challenge for designing transparent conductors used in photovoltaics,
displays and solid-state lighting is the ideal combination of high optical transparency and …
displays and solid-state lighting is the ideal combination of high optical transparency and …
Wide Bandgap Perovskite Oxides with High Room‐Temperature Electron Mobility
Perovskite oxides are ABO3‐type compounds with a crystal structure capable of
accommodating a large number of elements at A‐and B‐sites. Owing to their flexible …
accommodating a large number of elements at A‐and B‐sites. Owing to their flexible …
Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm−1
Wide bandgap perovskite oxides with high room temperature conductivities and structural
compatibility with a diverse family of organic/inorganic perovskite materials are of significant …
compatibility with a diverse family of organic/inorganic perovskite materials are of significant …
[HTML][HTML] Adsorption-controlled growth of La-doped BaSnO3 by molecular-beam epitaxy
Epitaxial La-doped BaSnO 3 films were grown in an adsorption-controlled regime by
molecular-beam epitaxy, where the excess volatile SnO x desorbs from the film surface. A …
molecular-beam epitaxy, where the excess volatile SnO x desorbs from the film surface. A …
[HTML][HTML] New approaches for achieving more perfect transition metal oxide thin films
This perspective considers the enormous promise of epitaxial functional transition metal
oxide thin films for future applications in low power electronic and energy applications since …
oxide thin films for future applications in low power electronic and energy applications since …
Reversible manipulation of photoconductivity caused by surface oxygen vacancies in perovskite stannates with ultraviolet light
Programmable optoelectronic devices call for the reversible control of the photocarrier
recombination process by in‐gap states in oxide semiconductors. However, previous …
recombination process by in‐gap states in oxide semiconductors. However, previous …
Doping the Undopable: Hybrid Molecular Beam Epitaxy Growth, n-Type Doping, and Field-Effect Transistor Using CaSnO3
The alkaline earth stannates are touted for their wide band gaps and the highest room-
temperature electron mobilities among all of the perovskite oxides. CaSnO3 has the highest …
temperature electron mobilities among all of the perovskite oxides. CaSnO3 has the highest …
[HTML][HTML] Synthesis science of SrRuO3 and CaRuO3 epitaxial films with high residual resistivity ratios
Epitaxial SrRuO 3 and CaRuO 3 films were grown under an excess flux of elemental
ruthenium in an adsorption-controlled regime by molecular-beam epitaxy (MBE), where the …
ruthenium in an adsorption-controlled regime by molecular-beam epitaxy (MBE), where the …
Deep-ultraviolet transparent conducting SrSnO3 via heterostructure design
Exploration and advancements in ultrawide bandgap (UWBG) semiconductors are pivotal
for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics …
for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics …