Preparation of supported metallic nanoparticles using supercritical fluids: a review
Supercritical fluids (SCFs) have been used to deposit thin metal films onto a wide range of
surfaces and incorporate metallic particles into different inorganic and organic substrates for …
surfaces and incorporate metallic particles into different inorganic and organic substrates for …
Pulsed valve manifold for atomic layer deposition
T Dunn, C White, M Halpin, E Shero, H Terhorst… - US Patent …, 2017 - Google Patents
A vapor deposition device includes a reactor including a reaction chamber and an injector
for injecting vapor into the reaction chamber. The device also includes a manifold for …
for injecting vapor into the reaction chamber. The device also includes a manifold for …
Low temperature formation of high quality silicon oxide films in semiconductor device manufacturing
KM McLaughlin, A Pharkya, KS Reddy - US Patent 9,847,221, 2017 - Google Patents
Silicon oxide layer is deposited on a semiconductor substrate by PECVD at a temperature of
less than about 200 C. and is treated with helium plasma to reduce stress of the deposited …
less than about 200 C. and is treated with helium plasma to reduce stress of the deposited …
Vapor flow control apparatus for atomic layer deposition
CL White, E Shero - US Patent 9,388,492, 2016 - Google Patents
(57) ABSTRACT A device for performing ALD includes a housing having a vacuum chamber
that surrounds a horizontal flow reactor. The device further includes a gas distribution …
that surrounds a horizontal flow reactor. The device further includes a gas distribution …
Single-chamber sequential curing of semiconductor wafers
K Shrinivasan, F Wang, G Kamian, S Gentile… - US Patent …, 2012 - Google Patents
The present invention relates to curing of semiconductor wafers. More particularly, the
invention relates to cure chambers containing multiple cure stations, each featuring one or …
invention relates to cure chambers containing multiple cure stations, each featuring one or …
UV treatment of etch stop and hard mask films for selectivity and hermeticity enhancement
B Van Schravendijk, C Denisse - US Patent 8,242,028, 2012 - Google Patents
A method for the ultraviolet (UV) treatment of etch stop and hard mask film increases etch
selectivity and hermeticity by removing hydrogen, cross-linking, and increasing density. The …
selectivity and hermeticity by removing hydrogen, cross-linking, and increasing density. The …
Sequential deposition/anneal film densification method
RM Tarafdar, GD Papasouliotis, R Rulkens… - US Patent …, 2010 - Google Patents
A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential
deposition/anneal technique. The deposited layer thickness is insufficient to prevent …
deposition/anneal technique. The deposited layer thickness is insufficient to prevent …
UV treatment for carbon-containing low-k dielectric repair in semiconductor processing
B Van Schravendijk, W Crew - US Patent 7,851,232, 2010 - Google Patents
3,983,385 A 9, 1976 Troue 4,357,451 A 11, 1982 McDaniel 4,391,663 A 7/1983 Hutter, III
4,563,589 A 1, 1986 Scheffer 4.885, 262 A 12/1989 Ting et al. 5,178,682 A 1/1993 …
4,563,589 A 1, 1986 Scheffer 4.885, 262 A 12/1989 Ting et al. 5,178,682 A 1/1993 …
PECVD methods for producing ultra low-k dielectric films using UV treatment
Q Wu, E Srinivasan, D Vitkavage - US Patent 7,906,174, 2011 - Google Patents
US PATENT DOCUMENTS 3,983,385 A 9, 1976 Troue 4,357,451 A 11, 1982 McDaniel
4,391,663 A 7/1983 Hutter, III 4,563,589 A 1, 1986 Scheffer 4,837,185 A 6, 1989 Yau et al …
4,391,663 A 7/1983 Hutter, III 4,563,589 A 1, 1986 Scheffer 4,837,185 A 6, 1989 Yau et al …
High temperature ALD inlet manifold
TJ Provencher, CB Hickson - US Patent 7,918,938, 2011 - Google Patents
A system and method for distributing one or more gases to an atomic layer deposition (ALD)
reactor. An integrated inlet manifold block mounted over a showerhead assembly includes …
reactor. An integrated inlet manifold block mounted over a showerhead assembly includes …