Tunnel junction engineered photocarrier dynamics in epitaxial semiconductor nanowires for efficient and ultrafast photoelectrochemical photodetectors
M Fathabadi, S Zhao - ACS Photonics, 2023 - ACS Publications
Photodetection using photoelectrochemical (PEC) principles is an emerging field in
photonics. In recent years, using epitaxial III-nitride nanowires as photoelectrodes, high …
photonics. In recent years, using epitaxial III-nitride nanowires as photoelectrodes, high …
A Novel Way to Fill Green Gap of GaN-Based LEDs by Pinning Defects in Nanorod Array
Nanorod array and planar green-emission InGaN/GaN multi-quantum well (MQW) LEDs
were fabricated by lithography, nano-imprinting, and top–down etching technology. The …
were fabricated by lithography, nano-imprinting, and top–down etching technology. The …
Optimization of microsphere optical lithography for nano-patterning
LN Dvoretckaia, AM Mozharov… - Journal of Physics D …, 2021 - iopscience.iop.org
We present an original approach to realistic modeling of light focusing by microsphere
systems to form the photonic jets for nano-patterning of the substrates with high refractive …
systems to form the photonic jets for nano-patterning of the substrates with high refractive …
Spatially and Time-Resolved Carrier Dynamics in Core–Shell InGaN/GaN Multiple-Quantum Wells on GaN Wire
Time-resolved cathodoluminescence is a key tool with high temporal and spatial resolution.
However, optical spectroscopic information can be also extracted using synchrotron pulses …
However, optical spectroscopic information can be also extracted using synchrotron pulses …
Etching of the SiGaxNy Passivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core–Shell Nanowires by MOVPE
To strongly enhance the vertical growth rate in MOVPE-grown GaN core–shell wires, large
quantities of silane (SiH4) need to be introduced for the growth of the wire core. This results …
quantities of silane (SiH4) need to be introduced for the growth of the wire core. This results …
[HTML][HTML] Multi-color emission based on InGaN/GaN micro-truncated pyramid arrays
W Jia, Z Du, L Zhang, R Yin, H Dong, T Li, Z Jia, B Xu - AIP Advances, 2024 - pubs.aip.org
3D micro-nano devices are expected to become the mainstay of multi-color solid-state
lighting in the future because of their broad-band characteristic and the advantage of …
lighting in the future because of their broad-band characteristic and the advantage of …
Optical phonons in core-shell semiconductor prism nanowires affected by the cross-section shape
ZX Xue, Y Qu, SL Ban - Micro and Nanostructures, 2022 - Elsevier
As building blocks of modern optoelectronic devices, semiconductor core-shell nanowires
are usually prisms. The Raman spectra of the nanowires can vary with the cross-section …
are usually prisms. The Raman spectra of the nanowires can vary with the cross-section …
Comparative study on electronic properties of GaN nanowires by external electric field
L Liu, F Lu, J Tian - Materials Science in Semiconductor Processing, 2021 - Elsevier
The electronic structure and optical properties of GaN nanowires under external electric
fields with different directions and field intensities are studied via first-principles. The results …
fields with different directions and field intensities are studied via first-principles. The results …
Multi-Color Emission Based on Ingan/Gan Micro Truncated-Pyramid Arrays
杜志伟 - papers.ssrn.com
Abstract 3D micro-nano devices are expected to become the mainstay of multi-color solid-
state lighting in the future because of their broad-band characteristic and the advantage of …
state lighting in the future because of their broad-band characteristic and the advantage of …