Tunnel junction engineered photocarrier dynamics in epitaxial semiconductor nanowires for efficient and ultrafast photoelectrochemical photodetectors

M Fathabadi, S Zhao - ACS Photonics, 2023 - ACS Publications
Photodetection using photoelectrochemical (PEC) principles is an emerging field in
photonics. In recent years, using epitaxial III-nitride nanowires as photoelectrodes, high …

A Novel Way to Fill Green Gap of GaN-Based LEDs by Pinning Defects in Nanorod Array

J Zhan, Z Chen, C Deng, F Jiao, X Xi, Y Chen, J Nie… - Nanomaterials, 2022 - mdpi.com
Nanorod array and planar green-emission InGaN/GaN multi-quantum well (MQW) LEDs
were fabricated by lithography, nano-imprinting, and top–down etching technology. The …

Optimization of microsphere optical lithography for nano-patterning

LN Dvoretckaia, AM Mozharov… - Journal of Physics D …, 2021 - iopscience.iop.org
We present an original approach to realistic modeling of light focusing by microsphere
systems to form the photonic jets for nano-patterning of the substrates with high refractive …

Spatially and Time-Resolved Carrier Dynamics in Core–Shell InGaN/GaN Multiple-Quantum Wells on GaN Wire

J Segura-Ruiz, D Salomon, A Rogalev, J Eymery… - Nano Letters, 2021 - ACS Publications
Time-resolved cathodoluminescence is a key tool with high temporal and spatial resolution.
However, optical spectroscopic information can be also extracted using synchrotron pulses …

Etching of the SiGaxNy Passivation Layer for Full Emissive Lateral Facet Coverage in InGaN/GaN Core–Shell Nanowires by MOVPE

J Bosch, PM Coulon, S Chenot, M Portail… - Crystal Growth & …, 2022 - ACS Publications
To strongly enhance the vertical growth rate in MOVPE-grown GaN core–shell wires, large
quantities of silane (SiH4) need to be introduced for the growth of the wire core. This results …

[HTML][HTML] Multi-color emission based on InGaN/GaN micro-truncated pyramid arrays

W Jia, Z Du, L Zhang, R Yin, H Dong, T Li, Z Jia, B Xu - AIP Advances, 2024 - pubs.aip.org
3D micro-nano devices are expected to become the mainstay of multi-color solid-state
lighting in the future because of their broad-band characteristic and the advantage of …

Optical phonons in core-shell semiconductor prism nanowires affected by the cross-section shape

ZX Xue, Y Qu, SL Ban - Micro and Nanostructures, 2022 - Elsevier
As building blocks of modern optoelectronic devices, semiconductor core-shell nanowires
are usually prisms. The Raman spectra of the nanowires can vary with the cross-section …

Comparative study on electronic properties of GaN nanowires by external electric field

L Liu, F Lu, J Tian - Materials Science in Semiconductor Processing, 2021 - Elsevier
The electronic structure and optical properties of GaN nanowires under external electric
fields with different directions and field intensities are studied via first-principles. The results …

Multi-Color Emission Based on Ingan/Gan Micro Truncated-Pyramid Arrays

杜志伟 - papers.ssrn.com
Abstract 3D micro-nano devices are expected to become the mainstay of multi-color solid-
state lighting in the future because of their broad-band characteristic and the advantage of …