CuS, Cu0. 6Zn0. 4S and ZnS thin films were grown by successive ionic layer adsorption and
reaction (SILAR) method on glass substrates at room temperature. The annealing …

The electrochemical method has been used to deposit zinc oxide (ZnO) thin films from
aqueous zinc nitrate solution at 80° C onto fluorine doped tin oxide (FTO) coated glass …

A comprehensive spectroscopic study is reported for MOCVD (Metal organic chemical vapor
deposition) grown AlN thin films prepared on sapphire (Al 2 O 3) and 6H–SiC substrates …

ZnO thin films were grown using Successive Ionic Layer Adsorption and Reaction (SILAR)
method on glass substrates at room temperature. Annealing temperatures and film thickness …

SnO 2 thin films have been grown on glass substrates using Successive Ionic Layer
Adsorption and Reaction (SILAR) method at room temperature and ambient pressure. The …

This paper reports on the comparative investigation of structural and optical properties of
nano thin films of ZnO and Sr-doped ZnO (SZO) onto glass substrates synthesized by a two …

This study aims to provide a close insight into the possibilities and constraints associated
with the development of ZnO structures on polyvinylidene fluoride (PVDF) hollow fiber …

ZnO thin films grown on Si (1 1 1) substrates by using atomic layer deposition (ALD) were
annealed at the temperatures ranging from 300 to 500° C. The X-ray diffraction (XRD) …

AlN thin films grown on different face sapphire substrates by metalorganic chemical vapor
deposition were studied comprehensively by a variety of techniques including high …

The electronic and chemical properties of semiconductor materials may be useful in
preventing growth of microorganisms. In this article, in vitro methods for assessing microbial …