Homoepitaxy provides an ideal testing ground for fundamental concepts in film growth. The
rich variety of complex far-from-equilibrium morphologies which can form during deposition …

Experimental results on the epitaxy of Si and Ge on Si (001) and Si (111) surfaces, which
are obtained by scanning tunneling microscopy (STM) imaging during growth, are reviewed …

Crystal growth far from thermodynamic equilibrium is nothing but homoepitaxy-thin film
growth on a crystalline substrate of the same material. Because of the absence of misfit …

When collimated beams of low energy ions are used to bombard materials, the surface often
develops a periodic pattern or “ripple” structure. Different types of patterns are observed to …

We review in this article the current theoretical understanding of collective and single
particle diffusion on surfaces and how it relates to the existing experimental data. We begin …

The last two decades of progress in the theory of crystal surfaces in and out of equilibrium is
reviewed. Various instabilities that occur during growth and sublimation, or that are caused …

Oxygen vacancies in complex oxides are indispensable for information and energy
technologies. There are several means to create oxygen vacancies in bulk materials …

Surface plasmons in metals promise many fascinating properties and applications in optics,
sensing, photonics and nonlinear fields. Plasmonic nanostructures with extremely small …

We discuss the impact of kinetics, and in particular the effect of the Ehrlich–Schwöbel barrier
(ESB), on the growth and surface morphology of homoepitaxial GaN layers. The presence of …

Several aspects of the theory of epitaxial crystal growth from atomic or molecular beams are
developed from the perspective of statistical physics. Lectures are devoted to the rate …